Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Gas mixer

A gas mixer and air intake pipe technology, which is applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of uneven mixing of incoming gas, achieve fast and full mixing, stable and reliable quality, and improve growth. quality effect

Inactive Publication Date: 2014-01-15
无锡荣能半导体材料有限公司
View PDF13 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a gas mixer for the problem of inhomogeneous gas mixing in the current vapor deposition method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas mixer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Such as figure 1 As shown, the gas mixer includes a first hollow sphere 3 and a second hollow sphere 4 , and the diameter ratio of the first hollow sphere 3 to the second hollow sphere 4 is 1.2:1. One side of the first hollow ball 3 is provided with a first air intake pipe 1 and two second air intake pipes 2, wherein the end section of the first air intake pipe 1 stretches into the inside of the first hollow ball 3, and the first air intake pipe 1 The end of the air intake pipe 1 is at the air outlet of the first hollow ball 3 . The end section of the first air intake pipe 1 is preferably contracted, such as a tapered pipe, which helps to further improve the flow rate of the gas in the air intake pipe when it goes out, and between the two second air intake pipes 2 and the first air intake pipe 1 respectively Maintain a 60-degree angle. The air outlet of the first hollow ball 3 is connected with the air inlet of the second hollow ball 4 by the pipeline 6, and the other...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gas mixer. The gas mixer comprises a first hollow sphere and a second hollow sphere. A first gas inlet pipe and at least one second gas inlet pipe are arranged on one side of the first hollow sphere. The tail end of the first gas inlet pipe is positioned at a gas outlet of the first hollow sphere; the gas outlet of the first hollow sphere is connected with a gas inlet of the second hollow sphere through a pipe; a certain included angle is formed between the gas outlet direction of the second hollow sphere and the gas inlet direction of the second hollow sphere. The gas mixer disclosed by the invention can achieve the effect of rapidly and completely mixing gas, ensures that the concentration of the gas mixture is not liable to fluctuate and the quality of the gas mixture is stable and reliable, and effectively improves and controls the growth quality of semiconductors.

Description

technical field [0001] The invention belongs to the field of gas reaction devices, and in particular relates to a gas mixer. Background technique [0002] In the semiconductor industry, vapor deposition is a commonly used method for preparing semiconductor thin film materials. The gas used for growth is usually composed of carrier gas and various reaction gases. When entering the reaction chamber, since the flow rate of each gas is not the same, the intake pressure is also different, so that the intake air with a large flow rate will have a certain extrusion effect on the intake air with a small flow rate, and the gas stays in the reaction chamber for a very short time. , so that various gases cannot be fully mixed in the reaction chamber, resulting in fluctuations in the concentration of gases in the reaction chamber, which affects the growth quality of semiconductor thin films. Contents of the invention [0003] The object of the present invention is to provide a gas mi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 刘耀峰潘振东
Owner 无锡荣能半导体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com