Processing method of device wafer with bump
一种加工方法、器件的技术,应用在半导体/固态器件制造、电气元件、电路等方向,能够解决晶片破损、粘接剂完全除去困难等问题,达到防止破损的效果
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[0043] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. figure 1 The shown device wafer 11 (hereinafter also simply referred to as "wafer 11") is formed of, for example, a silicon wafer with a thickness of 700 μm, and a plurality of dividing lines (streets) 13 are formed in a grid pattern on the surface 11a, and, Devices 15 are respectively formed in a plurality of regions divided by the plurality of planned dividing lines 13 .
[0044] Wafer 11 configured in this way includes device region 17 in which device 15 is formed and peripheral remaining region 19 surrounding device region 17 . Notches 12 are formed on the outer periphery of the wafer 11 as marks indicating the crystal orientation of the silicon wafer.
[0045] And, if figure 1 As shown in the enlarged view of , a plurality of protruding (spherical) bumps 52 are formed on four sides of each device 15 . The bumps 52 are configured to protrude from the surf...
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