Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Band gap reference circuit, power protection circuit and power supply

A reference circuit and reference technology, applied in the field of electronics, can solve the problems of poor accuracy and high power consumption of the double-bandgap reference voltage, and achieve the effect of fewer circuit stages, high accuracy and low power consumption

Inactive Publication Date: 2014-12-10
东莞品微电子有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the embodiments of the present invention is to provide a bandgap reference circuit, aiming at solving the problems of high power consumption and poor accuracy of the double-bandgap reference voltage provided by the existing bandgap reference circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Band gap reference circuit, power protection circuit and power supply
  • Band gap reference circuit, power protection circuit and power supply
  • Band gap reference circuit, power protection circuit and power supply

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0028] The embodiment of the present invention generates a bandgap current through two diode semiconductor channels, and directly generates a relative power supply potential bandgap reference voltage and a relative ground potential bandgap reference voltage on the bandgap current branch, and the double-bandgap reference voltage has good consistency , low power consumption, small area and high precision.

[0029] figure 2 A structural diagram of a bandgap reference circuit provided by an embodiment of the present invention is shown, and for convenience of description, only parts related to the emb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is suitable for the electronic field, and provides a band gap reference circuit, a power protection circuit and a power supply. The band gap reference circuit comprises a band gap reference generation unit, a power supply potential band gap reference generation unit and a ground potential band gap reference generation unit, wherein the band gap reference generation unit is used for generating band gap current through access of two diode semiconductors; the power supply potential band gap reference generation unit is used for generating a relative power supply potential band gap reference voltage in a band gap current subcircuit according to the band gap current and a power supply voltage; and the ground potential band gap reference generation unit is used for generating a relative ground potential band gap reference voltage in the band gap current subcircuit according to the band gap current and a ground potential. According to the band gap reference circuit, the power protection circuit and the power supply, the band gap current is generated through the access of the two diode semiconductors, the relative power supply potential band gap reference voltage and the relative ground potential band gap reference voltage are directly generated in the band gap current subcircuit, and the two generated band gap reference voltages in the circuit are good in uniformity, low in power consumption, small in area, small in circuit level number, and high in precision.

Description

technical field [0001] The invention belongs to the field of electronics, and in particular relates to a bandgap reference circuit, a power supply protection circuit and a power supply. Background technique [0002] At present, with the rapid development of the integrated circuit industry, the bandgap reference circuit (also known as the bandgap circuit) has become an important part of the integrated circuit and electronic system due to its good temperature stability. The working principle of the bandgap circuit is: the forward conduction voltage of the diode has negative temperature characteristics, and the voltage difference between the forward conduction of two diodes with different current densities is proportional to the temperature (that is, has positive temperature characteristics). Compensation effect to obtain voltage and current with lower temperature coefficient. [0003] Usually, the bandgap reference circuit can only generate a bandgap reference voltage relativ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/569
Inventor 陆让天陈翔范世容张奇
Owner 东莞品微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com