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Substrate supporting structure and reaction chamber containing the same

A support structure and substrate technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems that the substrate support plate is easy to fly out and the rotation is unstable, so as to achieve stable positional relationship and improve The effect of uniformity of heating

Inactive Publication Date: 2013-05-01
BRILLIANT LIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem solved by the embodiments of the present invention is to provide a substrate support structure, which solves the problem that the substrate support plate on which the substrate is placed is easy to fly out during the rotation process and the rotation is unstable.

Method used

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  • Substrate supporting structure and reaction chamber containing the same
  • Substrate supporting structure and reaction chamber containing the same
  • Substrate supporting structure and reaction chamber containing the same

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Embodiment Construction

[0037] The existing substrate support disk is unstable during the rotation process and is easy to fly out. According to the inventor’s research, it is found that since the supporting column is usually arranged under the existing substrate supporting plate, the supporting column is used to drive the substrate supporting plate to rotate. Specifically, please combine figure 2 The schematic diagram of the structure of the prior art substrate support plate and its support column is shown. There is a support column 14 below the substrate support tray 12, and the area of ​​the support column 14 is smaller than the area of ​​the back surface of the substrate support tray 12. The support column 14 fixes the substrate support disk 12, and the substrate support disk 12 can rotate under the drive of the substrate support disk 14. The rotation surrounds the center of the contact surface of the substrate support disk 12 and the support column 14. Performed vertically. During the rotation,...

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Abstract

The present invention provides a substrate supporting structure and a reaction chamber containing the substrate supporting structure. The substrate supporting structure comprises a substrate supporting disc and a cylindrical supporting member, wherein the cylindrical supporting member is vertically arranged, the substrate supporting disc is supported on the top end of the cylindrical supporting member, the top end of the cylindrical supporting member is provided with a supporting member projection or a supporting member recess, the substrate supporting disc is provided with a supporting disc recess corresponding to the supporting member projection or a supporting disc projection corresponding to the supporting member recess, and the supporting member projection and the supporting disc recess are matched or the supporting member recess and the supporting disc projection are matched so as to lock the substrate supporting disc on the cylindrical supporting member. With the present invention, the problems that the substrate-placed substrate supporting disc easily fly out during a rotation process and rotation of the substrate supporting disc is not stable are solved.

Description

Technical field [0001] The present invention relates to the technical field of chemical vapor deposition (CVD), in particular to a substrate support structure and a reaction chamber containing the substrate support structure. Background technique [0002] MOCVD (Metal-Organic Chemical Vapor Deposition) is a chemical vapor deposition process developed on the basis of vapor phase epitaxial growth (VPE). It uses organic compounds of group III and group II elements and hydrides of group V and VI elements as source materials for crystal growth. The deposition process is carried out on the substrate by thermal decomposition reaction to grow various groups of III-V and II. -VI compound semiconductors and their multi-element solid solution thin layer single crystal materials. [0003] The principle of the existing chemical vapor deposition process will be described below. Specifically, please refer to figure 1 The structure diagram of the reaction chamber of the existing MOCVD equipment ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458
Inventor 黄允文
Owner BRILLIANT LIGHT TECH
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