Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation of cysteine surface modified CdTe or CdTe/CdS quantum dot and method for detecting arsenic by using quantum dot

A cysteine ​​and surface modification technology, applied in chemical instruments and methods, fluorescence/phosphorescence, luminescent materials, etc., can solve problems such as no related reports, waste of reagents, cumbersome steps, etc., and achieve strong photochemical stability, The effect of short cladding time and simple operation

Active Publication Date: 2013-03-27
HUNAN UNIV
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the preparation of cysteine-CdTe / CdS core-shell quantum dots generally adopts a hydrothermal method (Zhang H Y, Sun P, Liu C, et al. L-Cysteine ​​capped CdTe-CdS core-shell quantum dots: preparation, characterization and immuno-labeling of HeLa cells. Luminescence, 2011, 26(2): 86-92) encapsulate water-soluble cysteine-CdTe quantum dots, but this encapsulation method has cumbersome steps, time-consuming, It is easy to cause defects such as waste of reagents, and the method used is to directly inject the Te solution reduced by NaBH4 into the Cd precursor solution, which may also introduce impurities such as boron compounds
[0006] In addition, there is no relevant report on the current method of detecting arsenic ions based on fluorescent quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of cysteine surface modified CdTe or CdTe/CdS quantum dot and method for detecting arsenic by using quantum dot
  • Preparation of cysteine surface modified CdTe or CdTe/CdS quantum dot and method for detecting arsenic by using quantum dot
  • Preparation of cysteine surface modified CdTe or CdTe/CdS quantum dot and method for detecting arsenic by using quantum dot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0034] 1. Preparation of cysteine-CdTe quantum dots.

[0035] A method for preparing the cysteine ​​surface-modified CdTe quantum dots of the present invention includes the following steps:

[0036] (1) Preparation of Cd precursor solution: adopt figure 1 The simple device shown is prepared. First, at room temperature, 0.263g Cd(ClO 4 ) 2 ·6H 2 O(CdCl 2 Or CdAc 2 Powder is also available) and 0.186 g cysteine ​​(Cd 2+ The molar ratio of cysteine ​​to cysteine ​​is 1:2.4), and then add 20 mL of water to dissolve, and dissolve the mixture in water under constant magnetic stirring to obtain the Cd precursor solution; use 1 mol / L NaOH solution to remove the Cd precursor The pH value of the body solution is adjusted to 9.0 (9.0~11.2 can be used), and the volume is adjusted to 40 mL and then transferred to figure 1 In the three-necked flask on the left of the simple device shown in;

[0037] (2) Generate H 2 Te: in figure 1 Add 0.03g Te powder and 0.067g NaBH to the three-necked flask on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a cysteine surface modified CdTe or CdTe / CdS quantum dot, which comprises the following steps of: under the condition of room temperature, mixing a cadmium-containing compound powder with cysteine, fully stirring and regulating the pH value to obtain a Cd precursor solution; then adding NaBH4 in Te powder, injecting an acid liquor, bringing H2Te gas generated by acidization under the action of a nitrogen flow out and introducing into the Cd precursor solution, heating for reaction and refluxing to obtain a CdTe quantum dot solution, adding Na2S solution in the CdTe quantum dot solution, and standing to obtain the cysteine surface modified CdTe / CdS nuclear shell quantum dot. The quantum dot disclosed by the invention is added in an arsenic ion-containing solution, and is subjected to fluorescent quantitative characterization by using a fluorospectro photometer to obtain a fluorescent response curve, and therefore, the qualitative or quantitative detection of the concentration of trivalent arsenic ions in a solution to be detected can be realized. The preparation method has the advantages of simpleness in operation, high sensitivity, good selectivity and the like.

Description

technical field [0001] The invention relates to the preparation of a nanometer material and its application in the detection of arsenic ions, in particular to a preparation method of a quantum dot modified on the surface of cysteine ​​and its application in the detection of arsenic. Background technique [0002] Arsenic is a non-metallic element and is one of the essential trace elements for some animals, but excessive arsenic enrichment in the body will cause poisoning, and severe cases may even be fatal. Arsenic pollution in surface water and drinking water has become one of the culprits that seriously threaten human health around the world. Relevant data show that as many as 140 million people worldwide have been exposed to arsenic-containing drinking water that exceeds the World Health Organization standard (10 ppb). Therefore, the monitoring of arsenic content in natural water bodies has attracted more and more attention. [0003] Arsenic exists in nature in the form ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88G01N21/64
Inventor 王柯敏羊小海刘艳刘剑波王青
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com