Charge pump circuit of EEPROM (Electrically Erasable Programmable Read-Only Memory) used for passive UHF RFID (Ultra High Frequency Radio Frequency Identification Device) chip

Abstract

The invention discloses a charge pump circuit of an EEPROM (Electrically Erasable Programmable Read-Only Memory) used for a passive UHF RFID (Ultra High Frequency Radio Frequency Identification Device) chip, which mainly solves the problem that the power consumption is overlarge during the charging period of the charge pump circuit of a conventional EEPROM. The charge pump circuit consists of a bi-phase non-overlapping clock generating circuit (201), a digital circuit (202), a control logic circuit (203) and a main charge pump (204), wherein the bi-phase non-overlapping clock generating circuit, the digital circuit and the control logic circuit convert input signals into n+2 bit clock signals which are fed into a main charge pump, the minus end of a capacitor C of an odd level unit of the charge pump is connected with a clk_bar; the minus end of a capacitor C of an even level unit of the charge pump is connected with clock control signals clk_2, clk_4,..., and clk_2n; and the minus end of an output level capacitor CL is connected with clock signals clk-L; an ith clock signal clk_2i delays for delta t compared with an i-1 clock signal clk_2, wherein i=1, 2,..., n, and then the effective clock signals are output, so that during the charging period, all the capacitors are charged simultaneously, and the charge pump circuit has the advantages of low power consumption during the charging period.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to an electrically erasable programmable read-only memory (EEPROM) of a semiconductor integrated circuit, which can be used in passive ultra-high frequency radio frequency identification (UHF) RFID tag chip circuits. Background technique [0002] With the continuous deepening of research on passive UHF RFID tag chips, many original technical problems have been overcome. However, EEPROM, which is the mainstream storage unit and memory of UHF RFID tag chips, is still difficult due to its special process and design complexity. Restricting the progress of passive UHF RFID, especially the high-voltage generation circuit of EEPROM, has always been the bottleneck restricting the research and practical application of passive UHF RFID. [0003] The basic principle of the EEPROM high-voltage generation circuit is the Dickson charge pump. At present, many mature, high-efficiency, low-po...

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Problems solved by technology

[0008] From the above analysis, it can be seen that the above three solutions will lead to an increase in chip area or power consumption, and none of them can meet the application requirements of passive UHF RFID.

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