Power semiconductor module and power electronic device applying same

Abstract

The invention provides a power semiconductor module and a power electronic device applying the same. The power semiconductor module comprises an upper bridge arm circuit, a box-shaped first outer shell for containing the upper bridge arm circuit, a lower bridge arm circuit and a box-shaped second outer shell for containing the lower bridge arm circuit, wherein the upper bridge arm circuit and the box-shaped first outer shell for containing the upper bridge arm circuit are independently packaged into a first module, and the lower bridge arm circuit and the box-shaped second outer shell for containing the lower bridge arm circuit are independently packaged into a second module, i.e. each phase of a three-level frequency converter formed by the semiconductor module provided by the invention only comprises two modules. Compared with the number of modules of each phase of the frequency converter in the prior art, the number of the modules of the frequency converter of the invention is reduced, circumscribed connecting circuits needed between the modules are reduced, the power consumption of each module is further reduced, and at the same time the size of the mutually connected circuits of the three-level frequency converter formed by the semiconductor module provided by the invention is reduced, so that the cost of manufacture is reduced.

Description

technical field [0001] The present invention relates to a power electronic system, more specifically to a power semiconductor module and power electronic equipment using the same. Background technique [0002] Three-level inverters have been widely used in the field of electrical transmission, among which, the three-level inverter topology provides an effective way for the realization of high-voltage, high-power inverters. At present, the traditional three-level inverter topology mainly includes a plurality of clamping diodes and a plurality of switching elements, wherein each switching element is composed of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) connected in antiparallel and Freewheeling diode (FWD), and each phase of the three-level inverter topology includes 2 clamping diodes and 4 switching elements. Usually, 2 clamping diodes are packaged together and called a diode module. Encapsulating two switching elements together is called...

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Problems solved by technology

[0004] In view of this, the present invention provides a power semiconductor module and power electronic equipment using it, which effectively solves the problem of large number of three-level inverter modules, high power consumption of each module, and large circuit volume in the prior art. question

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