Super-resolution thermal infrared imager and method for acquiring high-resolution infrared image
An infrared thermal imager, super-resolution technology, applied in the field of infrared thermal imaging
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Embodiment 1
[0062] Such as figure 1 Shown is a basic embodiment of the composition of a super-resolution infrared thermal imaging camera of the present invention.
[0063] A super-resolution thermal imaging camera, comprising an encoding component 100 located at the forefront of the super-resolution thermal imaging camera and centered on the optical axis O-O', for receiving infrared radiation signals emitted by scene 001, and Encode the infrared radiation signal; in the rear of the encoding assembly 100 along the optical axis OO' direction, an infrared optical system 200 and an area array infrared detector focal plane 300 are sequentially installed; the infrared optical system 200 is used to pass through the encoding assembly The infrared radiation of 100 is converged on the target surface of the focal plane 300 of the area array infrared detector to enhance the signal-to-noise ratio of the infrared image, and is used for the protection window of the focal plane 300 of the area array inf...
Embodiment 2
[0066] Example 2 : The difference with embodiment 1 is: this embodiment is such as image 3 As shown, it is a better technical solution. Among the N×N square diaphragms 103.2, N is equal to 8, that is, there are 8×8 equal to 64 square diaphragms 103.2. Among them, the high light transmittance film 103.21 and the low light transmittance The light transmittance ratio of the high-efficiency diaphragm 103.22 is 10: 1; the number of low light transmittance diaphragms 103.22 is 31, which is 1.92 / 4 of the total number of 64 square diaphragms 103.2, which is nearly half, and the remaining 33 square The diaphragm 103.2 is a high light transmittance diaphragm 103.21; the substrate 103.1 of this embodiment is a silicon substrate.
Embodiment 3
[0067] Example 3 : Different from Embodiment 1: among the N×N square diaphragms 103.2 of the present embodiment, N is 24, that is, there are 24×24 equal to 576 square diaphragms 103.2, wherein, the high light transmittance diaphragm 103.21 and the low The light transmittance ratio of the light transmittance diaphragm 103.22 is 10:0.8; the number of low light transmittance diaphragms 103.22 is equal to 1 / 4 of the total number of square diaphragms 103.2, and the remaining square diaphragms 103.2 are high light transmittance diaphragms 103.21; the substrate 103.1 in this embodiment is a silicon substrate.
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