Miniaturized power gain balancer

Abstract

The invention relates to a miniaturized power gain balancer, which comprises a micro-strip layer, a first medium layer, a first metal layer, a second medium layer, a second metal layer, a third medium layer and a third metal layer sequentially stacked from top to bottom. A first metalized through hole penetrates through a first via hole to be connected with a first metalized counter bore to form a probe structure, and the top of the probe structure is connected with a first metal connecting plate. A third metalized through hole penetrates through a third via hole to be connected with a second metalized counter bore to form a probe structure, and the top of the probe structure is connected with a third metal connecting plate. A second metalized through hole penetrates through a first via hole to be connected with a metalized through hole and then penetrates through a via hole to be connected with a metalized counter bore to form a probe structure, and the top of the probe structure is connected with a first metal connecting plate. The miniaturized power gain balancer has the advantages that a resonant cavity is embedded in a multi-layer medium substrate by the low-temperature co-fired ceramic technique, occupied planar space is reduced by a stereo staggered layer arrangement way, and miniaturization is realized.

Description

technical field [0001] The invention belongs to the technical field of power devices, and in particular relates to a power gain equalizer aimed at adjusting the flatness of power gain of a high-power traveling wave tube. Background technique [0002] At present, the commonly used power gain equalizers for adjusting the gain flatness of traveling wave tubes mainly include three types according to transmission line types: microstrip line type, waveguide type and coaxial line type. The basic composition of microstrip line type, waveguide type and coaxial line type includes a transmission line main line and several resonant absorption units connected to the transmission line main line. When the energy transmitted on the main line of the transmission line passes through a resonant absorbing unit, the resonant absorbing unit couples the resonant frequency of the resonant absorbing unit and a part of the energy around it into the resonant absorbing unit, relying on the absorbing me...

AI Technical Summary

Problems solved by technology

[0003] For the microstrip line type, since the main transmission line and the resonant absorption unit are located in the same space layer, there is still room for further reduction in its volume, and the Q value of the resonant absorption unit is lower than that of the coaxial line or waveguide type. Not easy to achieve a steeper decay curve

[0004] For waveguide type and coaxial line type, due to the use of wave-absorbing materials, the simulation calculation amount is large, the design cycle is long, and there are differences between the real object and the simulation results, which require later debugging work, so a tunable mechanical structure is required, so the design Complex structure, large volume

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