Microwave antenna for generating plasma

A microwave antenna and plasma technology, which is applied in the directions of plasma, antenna, and antenna parts, etc., can solve the problems of specified power limit and uncomfortable antenna, and achieve the effect of uniform large area and uniform symmetry.

Active Publication Date: 2014-11-19
KOREA INST OF FUSION ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the Licitano coil has disadvantages such as (i) non-axisymmetry of the plasma profile and (ii) limitation of specified power due to the use of uncooled coaxial cables, etc.
Therefore, it is considered unsuitable as an antenna for a large-area uniform plasma source

Method used

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  • Microwave antenna for generating plasma
  • Microwave antenna for generating plasma
  • Microwave antenna for generating plasma

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Embodiment Construction

[0031] The description about the specific structure or function is only for illustrating the embodiment according to the concept of the present invention, and the embodiment according to the concept of the present invention can be implemented in many different ways, and is not limited to this specification Examples stated.

[0032] Embodiments according to the concept of the present invention can be modified in various ways and have various forms. Therefore, specific embodiments are shown with drawings and described in detail in this specification. However, the embodiments according to the concept of the present invention are not limited to the specific forms or methods disclosed herein, but shall include all changes, replacements or equivalents included in the concept of the present invention and its technical scope.

[0033] Terms such as first and / or second may be used to describe various components, but the above-mentioned components are not limited to the above-mentioned ...

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Abstract

The present invention relates to an antenna of a novel construction for generating a uniform and large-area plasma by using microwaves, and the microwave antenna for generating plasma of the present invention comprises a waveguide, an antenna main body, and a connecting part of coaxial construction for electrically connecting the waveguide and the antenna main body; wherein the antenna main body consists of a doughnut-shaped electrical conductor block formed with a plurality of slots, recesses are formed between the plurality of slots in the electrical conductor block, and a plurality of permanent magnets are inserted in the recesses. The plurality of slots can be formed passing through inner and outer parts of the electrical conductor block, and the plurality of slots can be formed so as to repeat in a square-wave shape.; The present invention has the advantageous effect that a plasma can be generated which has uniform symmetry of uniform large area because the permanent magnets are mounted directly on the antenna itself, hot electrons (energetic electrons) produced by means of ECR pass through and are distributed by the microwave antenna as a whole due to a force caused by magnetic field gradient and curvature, and the hot electrons again ionise the surrounding neutral particles.

Description

technical field [0001] The invention relates to a microwave antenna capable of generating uniform large-area plasma. More specifically, the present invention relates to a microwave antenna in which a permanent magnet is directly mounted on the antenna body itself, energetic electrons generated by ECR are uniformly distributed throughout the antenna body according to a magnetic field, and plasma ionized by the above energetic electrons The body has uniform symmetry. The microwave antenna is used to generate the plasma. Background technique [0002] Generally, ECR (Electronic Cyclotron Resonance; electron cyclotron resonance) plasma source is a very effective plasma generation source, which can expand the flow and process range of plasma to low pressure (for example, 10 -4 Torr) field. [0003] In addition, in various semiconductor processes (plasma processing) such as etching and vapor deposition using plasma, in order to meet the limit characteristics and yield required b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/24H05H1/34
CPCH01J37/3222H01J37/32229H01Q1/366H01Q1/526H01Q13/08H05H1/46H05H1/4622H05H1/463
Inventor 刘铉锺章守旭郑熔镐李奉柱
Owner KOREA INST OF FUSION ENERGY
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