Explosion-proof device and method for producing straightly-pulled and heavily phosphorus-doped single crystals

Abstract

The invention relates to an explosion-proof device and method for producing straightly-pulled and heavily phosphorus-doped single crystals. The explosion-proof device comprises an air purifier, a gas flow valve, a gas flowmeter, an annular pipe, multiple branch pipes and multiple connecting pipes, wherein the air purifier, the gas flow valve and the gas flowmeter are connected through the connecting pipes; one end of each connecting pipe is communicated with the annular pipe; and one end of each branch pipe is communicated with the annular pipe, and the other end of each branch pipe extends into a furnace body. The explosion-proof method comprises the following steps of: in the process of producing the heavily phosphorus-doped single crystals, after starting doping, opening the gas flow valve, introducing an amount of purified air, and stopping introducing the purified air until crystal pulling ends and solidification of pot material lasts for more than 1-5 minutes. By adopting the explosion-proof device and method provided by the invention, the problem of explosibility during fire cleaning in producing the straightly-pulled and heavily phosphorus-doped single crystals is effectively solved, thereby ensuring the safety of a process.

Description

technical field [0001] The invention relates to a production method of a Czochralski heavily doped phosphorus single crystal, in particular to an explosion-proof device and an explosion-proof method for producing a Czochralski heavily doped phosphorus single crystal. Background technique [0002] Czochralski heavy-doped silicon single crystal is an indispensable basic material in the semiconductor industry, and a large amount of Czochralski heavy-doped single crystal needs to be produced. Due to the low melting point and boiling point of phosphorus, it will continue to volatilize in the high-temperature silicon melt, so a large amount of elemental phosphorus needs to be added in the production process of Czochralski re-doped phosphorus single crystal. After doping, phosphorus vapor continuously volatilizes from the silicon melt during the pulling process of the single crystal, and is discharged from the furnace body along with the Ar gas. Due to the low temperature of the f...

AI Technical Summary

Problems solved by technology

[0003] After the furnace is cooled and shut down, during the furnace cleaning process, the phosphorus element in the furnace wall, pipes and other parts is exposed to the air, and it is very easy to react with oxygen and spontaneously ignite, and then a chain reaction occurs and explodes, which poses a great threat to the personal safety of employees.

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