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A Method for Measuring and Converting Domain Reversal Current of Insulated/Leakage Ferroelectric Thin Film into Hysteresis Loop

A ferroelectric thin film, reverse current technology, applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., can solve the problem of lack of test functions, and achieve the effect of increasing the difficulty of distinguishing and fast measuring

Inactive Publication Date: 2011-12-14
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing commercial equipment does not have the above test functions

Method used

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  • A Method for Measuring and Converting Domain Reversal Current of Insulated/Leakage Ferroelectric Thin Film into Hysteresis Loop
  • A Method for Measuring and Converting Domain Reversal Current of Insulated/Leakage Ferroelectric Thin Film into Hysteresis Loop
  • A Method for Measuring and Converting Domain Reversal Current of Insulated/Leakage Ferroelectric Thin Film into Hysteresis Loop

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and examples, and the given examples are only used to explain the present invention, not to limit the present invention.

[0028] The pulse signals required for the test are provided by Agilent 81150A arbitrary waveform signal generator through R t The voltage (or current) across both terminals is recorded by LCWR 6200A oscilloscope, R t = 100 ohms.

[0029] One, measure insulating bismuth ferrite film capacitor (BiFeO2) by the present invention 3 / SrRuO 3 / SrTiO 3 ) hysteresis loop, BiFeO 3 The thickness is 300nm, the electrode area S=3.14×10 -3 cm 2 .

[0030] (1) Connect the ferroelectric film to be tested in series with the signal generator, oscilloscope, standard resistance, etc., and use the pulse signal generator to generate a bipolar voltage pulse (pulse width 750 nanoseconds, amplitude 8V, such as figure 2 shown), the voltage V across the total resista...

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Abstract

Provided are a method, a device, and a program product for testing the performance of a ferroelectric film. The method comprises: testing, based on a test circuit (110) formed by a ferroelectric capacitor (111) and a resistor (113) connected in series, a ferroelectric hysteresis loop of a ferroelectric film by using a square voltage pulse with a pulse width comparative to an electric domain inversion time. By means of the method, the test is accurate and reliable and the range of the test frequency is wide. The method can be used to test the performance of an insulative ferroelectric film and an electric leakage ferroelectric film.

Description

technical field [0001] The invention belongs to the technical field of solid-state dielectric performance testing, and in particular relates to a method for measuring and converting electric domain reversal current of an insulation / leakage ferroelectric thin film into an electric hysteresis loop. Background technique [0002] The most commonly used method to measure the reverse nucleation and growth rate of electric domains under an applied electric field is to apply a voltage square pulse with a very short rising edge (~0.2-5ns) to the ferroelectric film, and then observe it with an oscilloscope. Series resistance (R L ) on the voltage (V L ) changes with time (t), so as to calculate the electric domain motion current (I sw )Change with time. The change of this current with time will show a peak value, and the measurement of the peak position can evaluate the switching time of the electric domain, that is, the response time of the ferroelectric memory, piezoelectric devi...

Claims

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Application Information

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IPC IPC(8): G01R19/00
CPCG01R19/00G01R31/52
Inventor 江安全刘骁兵
Owner FUDAN UNIV
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