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Method for bonding polysilicon ingot and tray

A technology of polycrystalline silicon ingots and bonding method, which is applied to fine working devices, working accessories, stone processing equipment, etc., can solve the problems of polycrystalline silicon ingots producing foam scraps and a large amount of foaming agent, and achieves less debris, reduced dosage, Avoid the effect of foam crumbs

Active Publication Date: 2014-07-16
YANGZHOU RONGDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a method for bonding polycrystalline silicon ingots and trays, to solve the problem of large amount of foaming agent in the bonding method of the prior art and generation of foam chips when the polycrystalline silicon ingots are subsequently cut

Method used

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  • Method for bonding polysilicon ingot and tray
  • Method for bonding polysilicon ingot and tray
  • Method for bonding polysilicon ingot and tray

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] figure 2 It is a schematic flow chart of Embodiment 1 of the bonding method of the present invention. Such as figure 2 As shown, the bonding method of the polysilicon ingot and the pallet provided in Embodiment 1 includes:

[0033] Step A: Clean the tray used for sticking ingots;

[0034] Step B: placing polysilicon ingots on the tray;

[0035] Step C: Apply foam agent to the place where the edge of the bottom surface of the polycrystalline silicon ingot is in contact with the tray, and make the edge of the bottom surface of the polycrystalline silicon ingot corresponding to the groove of the tray free of foam agent.

[0036] image 3 It is a schematic diagram of sticking ingots using the bonding method of Embodiment 1. Such as image 3 As shown, when using the bonding method provided in Example 1 to bond ingots, first clean the tray 1 for bonding polysilicon ingots 2; Move to the exact position; finally spray foam agent 3 on the edge of the contact surface bet...

Embodiment 2

[0039] Figure 4 It is a schematic flow chart of Embodiment 2 of the bonding method of the present invention. Such as Figure 4 As shown, the bonding method of the polysilicon ingot and the pallet provided in Embodiment 2 includes:

[0040] Step A: Clean the tray used for sticking ingots;

[0041] Step B11: apply the foam agent on the tray, and keep the tray slot free of foam agent;

[0042] Step B12: placing the polysilicon ingot on the tray coated with foam agent;

[0043] Step C: Apply foam agent to the place where the edge of the bottom surface of the polycrystalline silicon ingot is in contact with the tray, and make the edge of the bottom surface of the polycrystalline silicon ingot corresponding to the groove of the tray free of foam agent.

[0044] When using the bonding method provided in Example 2 to stick the ingot, not only the foam agent is applied to the place where the edge of the bottom surface of the polycrystalline silicon ingot is in contact with the tra...

Embodiment 3

[0046] Figure 5 It is a schematic flow chart of Embodiment 3 of the bonding method of the present invention. Such as Figure 5 As shown, the bonding method of the polysilicon ingot and the pallet provided in Embodiment 3 includes:

[0047] Step A: Clean the tray used for sticking ingots;

[0048] Step B21: laying a layer of buffer thin pad that can be completely covered by the lower surface of the polysilicon ingot on the tray;

[0049] Step B22: pressing the polysilicon ingot on the buffer pad;

[0050] Step C: Apply foam agent to the place where the edge of the bottom surface of the polycrystalline silicon ingot is in contact with the tray, and make the edge of the bottom surface of the polycrystalline silicon ingot corresponding to the groove of the tray free of foam agent.

[0051] When using the bonding method provided in this embodiment to bond ingots, first clean the tray used for bonding polysilicon ingots; then lay a layer of cushioning pad on the upper surface o...

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Abstract

The invention discloses a method for bonding a polysilicon ingot and a tray. The method comprises the steps of: A. cleaning the tray for bonding the ingot; B. putting the polysilicon ingot on the tray; and C. coating a foaming agent on the part where the bottom edge of the polysilicon ingot contacts the tray, wherein the foaming agent does not exist at the place where the bottom edge of the polysilicon ingot corresponds to a tray slot. In the bonding method, as the foaming agent used for bonding the polysilicon ingot and the tray is sprayed at the bottom edge of the polysilicon ingot, so that the consumption of the foaming agent is decreased; in addition, as the foaming agent does not exist at the place where the bottom edge of the polysilicon ingot corresponds to the tray slot, the generation of foam scraps can be avoided when the polysilicon ingot is cut, thus the content of impurities in the sizing is reduced as much as possible.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a method for bonding polycrystalline silicon ingots and trays. Background technique [0002] In the polysilicon wire squaring technology, the polysilicon ingot needs to be bonded to the tray before cutting the polysilicon ingot. [0003] figure 1 Schematic diagram of the tray used for sticking ingots. Such as figure 1 As shown, the tray 1 has a tray slot 101. The currently used ingot sticking method is: use foam as an adhesive, first apply the foam evenly on tray 1, then place the polysilicon ingot on tray 1 coated with foam and move it to the exact position, wait 3 to 4 hours to allow the foam to cure. [0004] In the prior art ingot bonding method, the amount of foaming agent needed to bond a polycrystalline silicon ingot on the tray 1 is relatively large, about 500-750ml; and in the process of cutting the polycrystalline silicon ingot, the steel wire wil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D7/04B28D5/04
Inventor 包剑赵学军冷礼强
Owner YANGZHOU RONGDE NEW ENERGY TECH
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