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Method for eliminating redeposition of side wall of grid and semiconductor device

A gate sidewall and redeposition technology, applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve problems such as reducing circuit performance and device reliability, and achieve the effect of eliminating metal redeposition

Inactive Publication Date: 2011-09-07
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Moreover, in the etching and cleaning process after the gate etching process, it is difficult to peel off the tungsten-based polymer from the sidewall without affecting the morphology of the gate, which will reduce the reliability of the device, thereby reducing the circuit performance

Method used

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  • Method for eliminating redeposition of side wall of grid and semiconductor device
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  • Method for eliminating redeposition of side wall of grid and semiconductor device

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Embodiment Construction

[0022] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0023] The method for eliminating gate sidewall redeposition according to an embodiment of the present invention includes: a gate sidewall impurity etching step, which is used to remove gate sidewall impurities during the etching process by adjusting the size of the hard mask.

[0024] Specifically, for example, a physical vapor deposition step of the gate may be used to deposit the gate material in the early stage. However, the present invention is not limited to the deposition method of the gate material, that is, the physical vapor deposition step does not limit the present invention in any form. Also, the physical vapor deposition step of the gate can be performed in any suitable manner.

[0025] In fact, the present invention is characteri...

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Abstract

The invention provides a method for eliminating redeposition of the side wall of a grid and a semiconductor device. The method comprises etching impurities on the side wall of the grid so as to remove impurities on the side wall of the grid in the etching process through hard mask size adjustment. Through the method for eliminating redeposition of the side wall of a grid provided by the invention, the unexpected tungsten redeposition can be eliminated to a great degree.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more specifically, the present invention relates to a method for eliminating redeposition of gate sidewalls, and a semiconductor device obtained by adopting the method for eliminating redeposition of gate sidewalls. Background technique [0002] In the semiconductor manufacturing process, in order to form a desired gate structure, an etching process is inevitably required. [0003] However, there are some problems in the prior art in the process of etching the gate by using, for example, a dry etching process, especially in the etching process of manufacturing a relatively complicated gate structure. Specifically, in general, in the etching process of the gate of a MOSFET (metal-oxide-semiconductor) field effect transistor using material tungsten (W), due to the tungsten-based product in etching (for example, dry etching) It is not easy to be effectively removed during the ...

Claims

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Application Information

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IPC IPC(8): H01L21/8234H01L27/088
Inventor 任晓辉奚裴
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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