Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Giant magnetoresistance effect based sensor for measuring directions and intensity of magnetic fields

A technology of giant magnetoresistance and magnetic field direction, which is applied in the field of magnetic field measurement, can solve problems such as the inability to measure the direction of the magnetic field, and achieve the effects of improving the measurement frequency range and response speed, fast response speed, and improving stability

Active Publication Date: 2011-07-20
TSINGHUA UNIV
View PDF4 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conventional bridge structure cannot measure the direction of the magnetic field, so it is urgent to study a new structure that can simultaneously measure the direction and intensity of the magnetic field

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Giant magnetoresistance effect based sensor for measuring directions and intensity of magnetic fields
  • Giant magnetoresistance effect based sensor for measuring directions and intensity of magnetic fields
  • Giant magnetoresistance effect based sensor for measuring directions and intensity of magnetic fields

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The sensor for measuring the direction and strength of the magnetic field based on the giant magnetoresistance effect proposed by the present invention has a structure such as figure 2 shown, including:

[0016] The X sensing unit 9 is used to measure the magnetic field component in the X direction. The X sensing unit is composed of a first electric bridge and a second electric bridge, and the first electric bridge is composed of a first giant magnetoresistance R X1 , the first shielding resistance R SX1 , the second giant magnetoresistance R X2 and the second shield resistor R SX2 composition, the first giant magnetoresistance R X1 , the first shielding resistance R SX1 , the second giant magnetoresistance R X2 and the second shield resistor R SX2 After connecting end to end to form a bridge structure, the first giant magnetoresistance R X1 and the second shield resistor R SX2 The connection terminal of the first bridge is the positive input terminal Vcc, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a giant magnetoresistance effect based sensor for measuring directions and intensity of magnetic fields, belonging to the technical field of magnetic field measurement. The sensor comprises an X sensing unit for measuring the magnetic field component in the X direction and a Y sensing unit for measuring the magnetic field component in the Y direction, wherein each sensing unit adopts two-stage bridge structure; the first stage bridges adopt the same constant-voltage power source for supplying power; the second stage bridges adopt the output voltage of the first stage bridges for supplying power; the first stage output bridges output the voltage generated by the measured magnetic fields; and the second stage bridges output the voltage which is the square number with the voltage generated by the measured magnetic fields. The sensor is suitable for measuring the intensity and directions of the unknown magnetic fields, can be applied to measuring such magnetic fields as geomagnetic fields, magnetic fields in the transmission lines and the substations and the like, can be used for measuring the current in the power systems and the electronic systems, has small volume, high response speed and high sensitivity and greatly improves the measuring frequency range and response speed of the sensor.

Description

technical field [0001] The invention relates to a sensor for measuring the direction and strength of a magnetic field based on the giant magnetoresistance effect, and belongs to the technical field of magnetic field measurement. technical background [0002] In transmission lines and substations, normal operating currents, short-circuit currents and surge currents will generate very strong magnetic fields in the surrounding space. The key component to measure this is the magnetic field sensor. The sensor must not only be able to withstand a strong electric field environment, but also have considerable sensitivity and be able to measure the magnitude and direction of the magnetic field. [0003] Traditional magnetic field measurement generally uses a magnetic field sensor based on the principle of electromagnetic induction. New types of magnetic field sensors mainly include Hall sensors, optical fiber sensors and giant magnetoresistance sensors. Whether it is a traditional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R33/09
Inventor 何金良嵇士杰胡军刘俊欧阳勇
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com