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Floating gate flash memory device adopting T-shaped gate structure and manufacturing technology thereof

A flash memory device and manufacturing process technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of limiting storage density and inability to realize unit mirror storage, and achieve the effect of doubling the storage density

Inactive Publication Date: 2010-06-16
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Abstract
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AI Technical Summary

Problems solved by technology

Therefore, conventional floating gate devices cannot realize cell mirror storage, which limits the improvement of storage density

Method used

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  • Floating gate flash memory device adopting T-shaped gate structure and manufacturing technology thereof
  • Floating gate flash memory device adopting T-shaped gate structure and manufacturing technology thereof
  • Floating gate flash memory device adopting T-shaped gate structure and manufacturing technology thereof

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Embodiment Construction

[0022] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0023] like figure 2 As shown, the present invention adopts a floating gate flash memory device with a T-shaped gate structure, which includes from bottom to top: a tunnel oxide layer (TUNOX) 1, a polysilicon floating gate layer (FLOATING GATE POLY) 2 and an ONO (oxygen-nitride-oxide ) layer 3, the ONO layer 3 and the polysilicon floating gate layer 2 are etched into a groove, and a gate oxide layer 4 is formed on the sidewall of the polysilicon floating gate layer 2 in the groove, and the polysilicon is covered above the floating gate and in the groove , forming a polysilicon electrode 5 with a T-shaped gate structure. Its main structural parameters are: the thickness of the tunnel oxide layer 1 is 50-100 angstroms; the thickness of the polysilicon floating gate layer 2: 500-1000 angstroms; the thickness of the ONO layer 3: 50-200 angstroms...

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Abstract

The invention discloses a floating gate flash memory device adopting a T-shaped gate structure, which comprises a tunneling oxide, a polysilicon floating gate layer and an ONO layer from top to the bottom in sequence. A groove is etched between the ONO layer and the polysilicon floating gate layer; a gate oxide is formed on the side wall of the polysilicon floating gate layer of the groove; polysilicon covers over a floating gate and is spread in the groove to form a polysilicon electrode with a T-shaped gate structure. Moreover, the invention also discloses a manufacturing technology method of the floating gate flash memory device adopting the T-shaped gate structure. The device and the method realize the image memory of a floating gate flash memory unit through the physical isolation of the gate oxide and the polysilicon layer, and ensure that the memory density is doubled.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device, in particular to a floating gate flash memory device adopting a T-shaped gate structure; in addition, the present invention also relates to a manufacturing process method of the floating gate flash memory device adopting a T-shaped gate structure. Background technique [0002] The current mainstream flash memory device storage medium in the industry is divided into two types: one is a floating gate device (Floating Gate FLASH) using polysilicon (Poly-Si) as a charge storage medium; the other is using silicon nitride (SiN) as a charge storage medium. Devices for charge storage media (SONOS FLASH). [0003] With the continuous improvement of market demand for high-density memory products, coupled with the continuous efforts of research institutions and industries, various high-density memory technologies have been proposed and realized in actual products. For example, SONOS devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/788H01L29/423H01L27/115H01L21/336H01L21/28H01L21/8247H10B69/00
Inventor 林钢杨斌
Owner SHANGHAI HUA HONG NEC ELECTRONICS
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