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System and method for measuring in-situ surface magneto-optic Kerr effect

A magneto-optical Kerr effect, in-situ technology, used in magnetic property measurement, material analysis by optical means, material analysis by electromagnetic means, etc., to achieve the effect of easy operation

Inactive Publication Date: 2010-03-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, they either install an electromagnet device in the growth chamber, or connect a vacuum chamber to transport the grown sample to the chamber for in-situ surface magneto-optical Kerr effect measurement. A report on realizing in situ surface magneto-optic Kerr effect with magnets

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] Such as figure 1 as shown, figure 1 It is the distribution diagram of the in-situ surface magneto-optical Kerr effect measurement system configuration during the preparation of ferromagnetic thin films. figure 1 The system for measuring the in-situ surface magneto-optic Kerr effect during the preparation of ferromagnetic thin films shown includes a molecular beam epitaxy system, a magnetic field control system with a special optical path, a surface magneto-optic Kerr effect test system and an iron Magnetic film samples. Among them, the magnetic field control system with a special optical path is connected to the substrate observation window of the growth chamber of the molecular beam epitaxy system, and the surfa...

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Abstract

The invention discloses a system for measuring the in-situ surface magneto-optic Kerr effect during the preparation of a ferromagnetic film, which comprises a molecular beam epitaxy system, a magneticfield control system with a special light path, a surface magneto-optic Kerr effect test system and a ferromagnetic film sample, wherein the magnetic field control system with the special light pathis butted with a substrate observation window of a molecular beam epitaxy system growth chamber; the surface magneto-optic Kerr effect test system can ensure that incident laser is irradiated on the surface of the ferromagnetic film sample positioned on a growth position operator through the special light path of the magnetic field control system by debugging; and reflected laser on the surface ofthe ferromagnetic film sample can be fed back to a signal receiver through the special light path of the magnetic field control system. The invention also discloses a method for measuring the in-situsurface magneto-optic Kerr effect during the preparation of the ferromagnetic film. The system and the method have the advantages of simplicity, convenience and easy operation, and can realize the measurement of the in-situ surface magneto-optic Kerr effect without deconstruction and influence.

Description

technical field [0001] The invention relates to the technical field of ferromagnetic thin film preparation, in particular to a system and method for measuring the in-situ surface magneto-optic Kerr effect during the ferromagnetic thin film preparation process. Background technique [0002] For a long time, people have used semiconductors only to manipulate their electron charge degrees of freedom, while their electron spin degrees of freedom have not been fully utilized. Semiconductor spintronics is to manipulate the electron spin degrees of freedom or Simultaneously operate the two degrees of freedom of electron spin and charge in semiconductors to process and store information, thus replacing the modern information that relies on the manipulation of electron charge degrees of freedom in semiconductors and the operation of electron spin degrees of freedom in magnetic materials to store information processing technology. [0003] Semiconductor spintronics is actually an eme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/12G01N21/00G01N27/00
Inventor 赵建华姬扬郑厚植杨威鲁军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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