Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for storing a plurality of data in SDRAM

A data and data block technology, applied in the field of data storage, can solve the problems of limited SDRAM access bandwidth, high data storage efficiency, low efficiency, etc., and achieve the effect of saving reading time, improving system performance, and improving access bandwidth

Active Publication Date: 2015-04-01
BEIJING VIMICRO ARTIFICIAL INTELLIGENCE CHIP TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When its performance is good, the data storage efficiency is high; otherwise, the efficiency is low
But for now, even if it is an SDRC with the best performance, the improvement of its access bandwidth to SDRAM is limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for storing a plurality of data in SDRAM
  • Method for storing a plurality of data in SDRAM
  • Method for storing a plurality of data in SDRAM

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] see Figure 4 As shown, the method 100 for storing data in SDRAM involved in an embodiment of the present invention includes the following steps of determining to read the length information 110 of the BURST using the data of the SDRAM where the data is stored. Then, the stored data is divided according to the BURST length, so that it includes several data blocks 120 with the size of the BURST length, and finally each data is interleavedly stored in the SDRAM 130 .

[0023] Wherein, in SDRAM, it is composed of several storage arrays (banks), and each bank is composed of several storage units (pages). It reads the data stored therein usually in BURST mode (BURST MODE). The number of banks included in different SDRAMs is different, and the BURST length (BURST LENGTH) of the read data is also different, which can be 1, 2, 4 or 8 words.

[0024] Therefore, after the selected SDRAM is determined, the data block division of each data can be carried out, so that the size of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for storing a plurality of data in SDRAM, which comprises the following steps: each part of data is divided into a plurality of data blocks with the same size, the size of each data block is equal to the length of BURST which is used for reading the SDRAM internal storage data, and the data blocks of adjacent presetting part date are sequentially staggered and stored into a storing unit of an SDRAM storing array. In the method, the storing positions of the storing data in the SDRAM are arrayed, so the storage data in a SOC system which has larger probability of the concurrent access of a plurality of data packets by the similar offset in each MASTER can be more effectively accessed to save reading time, consequently, the access bandwidth of the SDRAM is increased, therefore, the performance of the whole system is improved.

Description

technical field [0001] The present invention relates to a method for storing data in SDRAM, especially a method for storing several picture data therein. Background technique [0002] With the development and wide application of information technology, the use of SDRAM for data storage and reading is becoming more and more widespread. [0003] Such as figure 1 As shown, currently, in the SOC (system on chip) system design where each MASTER has a relatively high probability of concurrent access to multiple blocks of data packets with similar offsets, there is no requirement for the storage location of the stored data in SDRAM . Such as figure 2 As shown, the storage method of these data in SDRAM is sequential storage, that is, after one data is stored, the next data is stored until all the data are stored. Assuming that the burst length of the data read is 4word, then the data read method please refer to image 3 shown. Since the way data is stored does not correspond ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
Inventor 李建军付军
Owner BEIJING VIMICRO ARTIFICIAL INTELLIGENCE CHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com