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Polishing composition for semiconductor wafer, production method thereof, and polishing method

A semiconductor and composition technology, which is applied in the field of semiconductor wafer grinding compositions, and can solve the problems of inability to obtain grinding speed and surface roughness.

Pending Publication Date: 2008-02-20
NIPPON CHECMICAL IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under such processing conditions, even if a conventional semiconductor wafer surface polishing composition containing fumed silica is used, sufficient polishing speed and surface roughness cannot be obtained.

Method used

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  • Polishing composition for semiconductor wafer, production method thereof, and polishing method

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Effect test

manufacture example

[0076] Add 520kg JIS No. 3 sodium silicate (sada-silicate) (SiO 2 : 28.8% by weight, Na 2 O: 9.7% by weight, H 2 O: 61.5% by weight), uniformly mixed to prepare diluted sodium silicate with a silicon dioxide concentration of 4.5% by weight. This diluted sodium silicate was passed through a column of 1000 liters of H-type strongly acidic cation exchange resin (AMBERLITE IR120B produced by ORGANO Corporation) regenerated in advance with hydrochloric acid to carry out dealkalization to obtain 3800 kg of silica with a concentration of 3.7% by weight and a pH of 2.9 active silicic acid. In this active silicic acid, the content rates of Na and K per unit of silica were 80 ppm and 5 ppm, respectively. Next, rice uses the method of accumulation to make the colloidal particles grow. That is, to a part of 580 kg of the obtained active silicic acid, a 20% by weight tetramethylammonium hydroxide aqueous solution was added with stirring to adjust the pH to 8.7, and the mixture was kept...

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Abstract

A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25 DEG C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.

Description

technical field [0001] The present invention relates to a composition for polishing a semiconductor wafer and a method for producing the same. More specifically, it relates to a semiconductor wafer polishing composition for polishing a flat surface or an edge portion of a semiconductor wafer, and a method for producing the same. Also, the present invention relates to a processing method for mirror-finishing the plane and edge portions of a semiconductor wafer using a semiconductor wafer polishing composition. The semiconductor wafer to be polished in the present invention includes a suitable silicon wafer and a semiconductor device substrate on which a metal film, an oxide film, or a nitride film (hereinafter referred to as a metal film, etc.) is formed on the surface. Background technique [0002] Electronic components such as ICs, LSIs, and super LSIs, which use semiconductor materials such as single crystal silicon as raw materials, are divided and written into multiple ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304
CPCC09K3/1463C09G1/02H01L21/30625
Inventor 前岛邦明宫部慎介泉昌宏田中弘明黑田真希子
Owner NIPPON CHECMICAL IND CO LTD
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