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Vacuum plasma reactor used for large area film growth

A plasma and reactor technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the limitation of electrode plate or dielectric plate diameter, unable to make large-area reaction chamber, plasma reaction The device can not meet the use requirements and other problems, so as to avoid leakage, improve uniformity and ensure uniform distribution

Inactive Publication Date: 2009-12-09
SUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although the above-mentioned reactor structure is often used to process samples of the prior art, the plasma reactor with the above-mentioned structure will not be able to meet the requirements when processing large-scale samples, especially when a large-area uniform silicon film needs to be grown on a glass substrate at a high speed. Requirements
There are problems in simply enlarging the aperture of the reactor and the diameter of the electric plate or the dielectric plate: on the one hand, the uniformity of silicon film growth depends on the uniformity of the electromagnetic wave excited plasma, which in turn depends on the vacuum plasma reactor. The induction coil above the electrode plate or the dielectric plate is excited to generate uniformity of the radio frequency field. Therefore, how to generate a uniform radio frequency field when the diameter of the vacuum reactor is enlarged is a key to the design of a large-area vacuum plasma reactor.
Due to the influence of standing wave conditions, and in order to obtain a uniform radio frequency field, the diameter of the electrode plate or dielectric plate is limited, so it is impossible to make a large-area reaction chamber

Method used

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Embodiment 1

[0026] See attached figure 1 , wherein the plasma reactor includes a vacuum reaction chamber 1, which is preferably configured as a cylindrical design to ensure that the reaction chamber 1 is symmetrical to the axis of symmetry of the entire electrode. The reaction chamber 1 includes a cylindrical highly conductive metal side wall and a top cover, and the bottom of the reaction chamber 1 is two symmetrically placed air inlets, and the reaction chamber 1 is controlled by a vacuum unit (not shown). The interior is vacuumed. A coaxial metal electrode 17 with good electrical conductivity and a coaxial electrical insulating ring 19 are arranged at the axial center of the top cover, and the electrical insulating ring 19 electrically isolates the metal electrode 17 from the top cover. An air inlet 18 is drilled at the center of the metal electrode 17, and is connected to the diversion hole 22 at the center of each electrode plate by the air inlet pipe 6, and is evenly introduced int...

Embodiment 2

[0032] Embodiment 2: The basic structure is the same as that of Embodiment 1. Four groups of square electrode plates (230mm×230mm) are connected in parallel, and the isolation material between them is polytetrafluoroethylene, and the isolation distance is 2 mm. Adjust the vertical position of the substrate holder so that the vertical distance between the substrate holder and the electrode plate is 5 cm. Silane (with H 2 Mixing, mixing ratio is 5: 95) enters in the vacuum chamber 1 with the flow of 150sccm through main gas inlet channel 18 and each minute gas inlet channel 6 and 7, and discharge pressure is 15Pa, and substrate is the glass substrate of large area. A radio frequency power supply with a frequency of 60MHz was started to excite the plasma, the radio frequency power was set to 1200W, and the film deposition time was 30 minutes. The total thickness of the silicon thin film grown on the glass substrate is about 500 nanometers, and the unevenness of the thin film is ...

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Abstract

The invention discloses a vacuum plasma reactor for large-area film growth, which includes a reaction chamber and a radio frequency power supply. The top of the reaction chamber is provided with an air inlet, and the bottom is provided with a vacuum suction port. The reaction chamber The body is provided with an electrode plate connected to the radio frequency power supply through a matching network, and a substrate frame electrode for carrying the substrate. It is characterized in that: the electrode plate is an electrode plate array composed of square electrodes; The air intake pipe is connected to the gas diversion hole located in the center of each square electrode plate; there is also a grounding flow uniforming ring arranged in the same plane as the upper electrode plate and the substrate holder electrode plate, and the grounding flow uniforming ring There are through holes distributed on it. The invention improves the coupling efficiency of radio frequency power, and can obtain a uniform radio frequency field in a larger area.

Description

technical field [0001] The invention relates to a device for film growth in a vacuum plasma mode, in particular to a vacuum plasma reactor for large-area film growth. Background technique [0002] Plasma is an electrically neutral, ionized gas with roughly equal densities of ions and electrons. The plasma used in industry is usually a low-temperature plasma with a plasma density of 10 8 -10 11 cm -3 Between, the average electron temperature is about several electron volts, which is a typical weakly ionized gas. Under the excitation of electromagnetic waves, these low-temperature plasmas are usually excited and generated under certain vacuum conditions. Different reaction gases with pressures ranging from tens of mTorr to tens of Torr are introduced into the vacuum chamber to realize the treatment of semiconductor wafers and insulators. , metal and other substrate samples are subjected to different treatments, such as film growth, substrate etching, surface plasma treatme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/505C23C16/52
Inventor 辛煜施毅左则文宁兆元
Owner SUZHOU UNIV
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