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Array filmsensor for simultaneously detecting Cu2+, Pb2+, Cd2+ and its preparing method

A thin-film sensor and array technology, applied in instruments, measuring devices, scientific instruments, etc., can solve the problems of long measurement cycle, complex pretreatment, and huge equipment, and achieve the effects of fast measurement, less sample solution, and convenient use.

Inactive Publication Date: 2008-11-19
NORTHEAST DIANLI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current detection methods mainly include atomic absorption spectrophotometry and mass spectrometry, etc., but the equipment used in these methods is huge and expensive, requires complex pretreatment, long measurement period and skilled operators, which brings great problems in practical applications. many inconveniences

Method used

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  • Array filmsensor for simultaneously detecting Cu2+, Pb2+, Cd2+ and its preparing method
  • Array filmsensor for simultaneously detecting Cu2+, Pb2+, Cd2+ and its preparing method
  • Array filmsensor for simultaneously detecting Cu2+, Pb2+, Cd2+ and its preparing method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] From figure 2 and figure 1 It can be seen that the present invention is used for simultaneous detection of Cu 2+ , Pb 2+ 、Cd 2+ The array thin-film sensor of the company uses p-type or n-type Si sheets as the substrate, and SiO2 is placed on the substrate. 2 layer, SiO 2 There are three kinds of layers above Cu 2+ , Pb 2+ 、Cd 2+ sensitive film.

[0026] The invention is used for simultaneous detection of Cu 2+ , Pb 2+ 、Cd 2+ The preparation of the arrayed thin film sensor consists of the following steps:

[0027] (1) Preparation of thin film sensor substrate and oxide layer

[0028] A p-type or n-type monocrystalline silicon wafer is selected as the substrate. After the silicon wafer is polished and cleaned, it is placed in a high-temperature furnace for thermal oxidation, so that a layer of SiO with a thickness of about 30nm is grown on the front of the silicon wafer in dry oxygen. 2 Remove the oxide layer on the back of the silicon wafer by ion etching...

Embodiment 2

[0036] (1) Preparation of thin film sensor substrate and oxide layer

[0037] A p-type or n-type monocrystalline silicon wafer is selected as the substrate. After the silicon wafer is polished and cleaned, it is placed in a high-temperature furnace for thermal oxidation, so that a layer of SiO with a thickness of about 30nm is grown on the front of the silicon wafer in dry oxygen. 2 Remove the oxide layer on the back of the silicon wafer by ion etching, and then use silver paste to make a ring-shaped ohmic contact lead-out wire. Except for the ring-shaped part, the rest are sealed with epoxy resin, which is the finished product. For the thin-film sensor substrate described above, the excitation light source can be either the front or the back;

[0038] (2) Preparation of sensitive materials

[0039] Selection of high-purity compounds CuS, Ag 2 S, CuI 2 , its molar ratio is 60: 25: 15. After fully leaking and grinding, under the pressure of 12Mpa, make a small cuboid, put ...

Embodiment 3

[0045] (1) Preparation of thin film sensor substrate and oxide layer

[0046] A p-type or n-type monocrystalline silicon wafer is selected as the substrate. After the silicon wafer is polished and cleaned, it is placed in a high-temperature furnace for thermal oxidation, so that a layer of SiO with a thickness of about 30nm is grown on the front of the silicon wafer in dry oxygen. 2 Remove the oxide layer on the back of the silicon wafer by ion etching, and then use silver paste to make a ring-shaped ohmic contact lead-out wire. Except for the ring-shaped part, the rest are sealed with epoxy resin, which is the finished product. For the thin-film sensor substrate described above, the excitation light source can be either the front or the back;

[0047] (2) Preparation of sensitive materials

[0048] Selection of high-purity compounds CuS, Ag 2 S, CuI 2 , the molar ratio of which is 65:30:20, after fully mixing and grinding, under the pressure of 12Mpa, make a small cuboid...

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Abstract

The array film sensor for simultaneously detecting Cu2+, Pb2+ and Cd2+ ions includes one P-type or N-type Si chip as substrate, one SiO2 layer and three kinds of film sensitive separately to Cu2+, Pb2+ and Cd2+ ions successively on the substrate. It is prepared through one laser pulse depositing process to prepare these three kinds of film on the surface of SiO2. It is selective on Cu2+, Pb2+ and Cd2+ ions in solution, and may be used in detecting the contents of Cu2+, Pb2+ and Cd2+ ions. The present invention may be used for the simultaneous qualitative and quantitative detection of Cu2+, Pb2+ and Cd2+ in river and lake water, blood, body fluid, industrial effluent, Chinese medicine, vegetable, fruit, tea, etc.

Description

technical field [0001] The invention relates to a sensor and a preparation method for simultaneously detecting several heavy metals, in particular to a sensor for simultaneously detecting Cu 2+ , Pb 2+ 、Cd 2+ Arrayed thin film sensor and its preparation method. Background technique [0002] Heavy metal ions (such as Zn 2+ , Pb 2+ 、Cd 2+ 、Cu 2+ 、Cr 6+ , Mn 5+ 、As 3+ , Fe 3+ , Hg 2+ ) can have harmful or even fatal effects on the human body, so the quantitative detection of heavy metals is of great significance in medicine, food, clinical and environmental monitoring. The current detection methods mainly include atomic absorption spectrophotometry and mass spectrometry, etc., but the equipment used in these methods is huge and expensive, requires complex pretreatment, long measurement period and skilled operators, which brings great problems in practical applications. Many inconveniences. Contents of the invention [0003] The object of the present invention is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/406H01L49/02
Inventor 门洪王建国
Owner NORTHEAST DIANLI UNIVERSITY
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