Substrate processing apparatus, pressure control method for substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method capable of controlling the pressure in a processing chamber without controlling the exhaust volume of the processing chamber without affecting substrate processing. The device is provided with: a processing chamber 102 that uses processing gas to process the substrate to be processed; divides the processing chamber into a processing space 102A for processing the substrate to be processed and an exhaust space 102B for discharging the gas in the processing chamber, and has a plurality of communicating processing chambers. The baffle plate 130 of the ventilation hole 132 of the space and the exhaust space; the processing gas supply mechanism 140 for supplying the processing gas to the processing space in the processing chamber; Regulating gas supply mechanism 150; when the processing gas is supplied from the processing gas supply mechanism, the pressure regulating gas is supplied through the pressure regulating gas supply mechanism to make the pressure of the processing space reach a preset pressure. Pressure controller 180.

Description

technical field [0001] The present invention relates to a substrate processing device for processing a substrate to be processed by processing gas and a pressure control method of the substrate processing device. Background technique [0002] As a substrate processing apparatus, there is known: a processing chamber provided with, for example, a stage on which a substrate to be processed is placed, and a processing gas is supplied into the processing chamber, and the substrate to be processed placed on the stage, such as a semiconductor wafer, a liquid crystal, etc., is known. A device for subjecting a substrate or the like to predetermined processing such as etching processing or film formation processing. Such a substrate processing apparatus generally includes a gas supply system for supplying processing gas to the processing chamber, and an exhaust system for exhausting gas from the processing chamber. A certain pressure is used to process the substrate to be processed. ...

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Problems solved by technology

[0006] However, in the technique of controlling the pressure in the processing chamber by controlling the exhaust volume of the processing chamber as described above, as described in, for example, Patent Document 1, when deposits are generated in the exhaust duct due to the discharge of the processing gas When the exhaust volume is changed, the exhaust valve itself will not operate, resulting in the problem that the pressure in the treatment room cannot be correctly controlled.

[0007] And in the case of controlling the exhaust volume of the processing chamber, for example, by APC control, the pressure control range controlled by the APC is limited with the size of the exhaust valve, etc., so the pressure control range is very narrow, and there is The problem is that according to the pressure in the processing chamber of the substrate processing device, etc., it is necessary to install an APC controller suitable for the device specification on each device.

[0009] However, in the apparatus shown in Patent Document 2, it is not described which part of the processing chamber is supplied with the gas for pressure adjustment, nor how the processing chamber is divided into a space for supplying the processing gas and a space for supplying the gas for adjusting the pressure.

In such an apparatus, there is a problem that if the gas for pressure adjustment is supplied during substrate processing, the processing gas and the gas for pressure adjustment are mixed, and the characteristics of the processing gas change, which affects the processing of the substrate to be processed.

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