Structure of nonvolatile memory cell

Abstract

The memory cell is composed of a grid electrode, a bit line and a word line. The bit line consists of embedded diffused conducting wire and a raised conducting layer on the embedded diffused conducting wire. Grid electrode is located between raised conducting layers of bit line. Word line perpendicular to bit line roughly is located on grid electrode and stepped across raised conducting layers of bit line. Sidewall of raised conducting layers of bit line possesses first gap wall and second gap wall on gap wall of word line.

Description

technical field [0001] The present invention relates to a structure of a memory element, and in particular to a structure of a non-volatile memory element. Background technique [0002] Contacts are used in VLSI and VLSI to connect multilayer circuit structures. In the development process of integrated circuits, when the component size advances to the sub-micron technical level, the traditional contact window is not only gradually insufficient, but also limits the performance of the component in many ways. When the area of ​​the contact window shrinks with the size of the device, its resistance also increases. Especially when the diffusion area shrinks with the size of the device, the alignment of the contact window and the diffusion area becomes a difficult problem. In order to avoid the contact window and the diffusion The misalignment of the area causes process problems and component failure. It is often necessary to reserve space for misalignment that will reduce the in...

AI Technical Summary

Problems solved by technology

In the development process of integrated circuits, when the component size advances to the sub-micron technical level, the traditional contact window is not only gradually insufficient, but also limits the performance of the component in many ways

When the area of ​​the contact window shrinks with the size of the device, its resistance also increases. Especially when the diffusion area shrinks with the size of the device, the alignment of the contact window and the diffusion area becomes a difficult problem. In order to avoid the contact window and the diffusion The misalignment of the area causes process problems and component failure. It is often necessary to reserve space for misalignment that will reduce the integration of components, or to maintain or even increase the area of ​​the diffusion area, but increasing the area of ​​the diffusion area will increase the substrate and diffusion. Junction capacitance between areas, thus reducing component speed

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