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Three-dimensional memory and preparation method thereof

A memory, three-dimensional technology, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of lowering the storage reliability of the charge trapping layer and reducing the retention of three-dimensional memory, so as to improve the storage retention characteristics, improve the storage reliability, The effect of suppressing lateral diffusion

Pending Publication Date: 2022-05-13
YANGTZE MEMORY TECH CO LTD
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  • Description
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Problems solved by technology

However, during the storage process, the charges stored in the charge traps will diffuse toward the axial direction of the channel structure, which will reduce the storage reliability of the charge trapping layer corresponding to each gate layer, thereby reducing the retention of the three-dimensional memory ( retention) feature

Method used

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  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof

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Embodiment Construction

[0029] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way.

[0030] It should be noted that in this specification, expressions such as first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features, especially do not represent any sequential order. Accordingly, a first part discussed in this application could also be termed a second part, and vice versa, without departing from the teachings of this application.

[0031] In the drawings, the thickness, size and shape of components have been slightly adjusted for convenience of illustration. The drawings are examples only and are not strictly drawn to scale. A...

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Abstract

The invention provides a three-dimensional memory and a preparation method thereof. The preparation method of the three-dimensional memory comprises the steps that an insulating layer, a spacer layer, the insulating layer and a sacrificial layer are alternately stacked to form a stacked structure, a channel structure penetrating through the stacked structure is formed, and the channel structure comprises a charge trapping layer formed on the inner wall of the channel structure; and disconnecting the charge trapping layer via the spacer layer.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and more specifically, to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] Three-dimensional memory increases storage density by using vertical memory arrays. The manufacturing process of the three-dimensional memory mainly includes: firstly, channel holes are formed in a laminated structure in which insulating layers and gate layers are alternately stacked, and then a functional layer and a channel layer are sequentially deposited in the channel holes to form a channel with a storage function. structure. [0003] The functional layer in the channel structure is the key structure for the three-dimensional memory to complete the storage function. Specifically, the functional layer includes a silicon oxide-silicon nitride-silicon oxide (ONO) structure sequentially formed on the outer wall of the channel structure, and each gate layer ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568H01L27/11582H10B43/30H10B43/27
CPCH10B43/30H10B43/27
Inventor 吴继君
Owner YANGTZE MEMORY TECH CO LTD
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