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Preparation method of metal layer

A metal layer and reaction chamber technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve problems such as metal layer defects, improve yield, avoid short circuit of metal lines, and uniform stress. Effect

Pending Publication Date: 2022-02-11
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] The application provides a method for preparing a metal layer, which can solve the problem of defects in the metal layer during the preparation process of the metal layer

Method used

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  • Preparation method of metal layer

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Embodiment Construction

[0025] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0026] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The invention provides a preparation method of a metal layer. The preparation method comprises the steps of cleaning the inner wall of a reaction chamber and an electrostatic chuck in the reaction chamber; baking the reaction chamber under a vacuum condition; placing a baffle on the electrostatic chuck to cover the surface of the electrostatic chuck; forming an aluminum film on the inner wall of the reaction chamber; withdrawing the baffle and releasing the pressure of the reaction chamber; providing a substrate, and moving the substrate to the electrostatic chuck; and forming a metal layer on the substrate. According to the invention, the cleaning process and vacuum baking are carried out on the inner wall of the reaction chamber and the electrostatic chuck in the reaction chamber, and the compact aluminum film is formed on the inner wall of the reaction chamber, so that defects of the metal layer can be avoided, the crystal quality of the metal layer is improved, and the product yield is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor metal thin film preparation, in particular to a preparation method of a metal layer. Background technique [0002] A reaction chamber (process chamber) is generally used to prepare a metal layer of a semiconductor device. Before the metal layer is prepared, the reaction chamber usually needs to be maintained. During the maintenance process of the reaction chamber, an aluminum film will be formed on the surface of the electrostatic chuck and the inner wall of the reaction chamber, which will mainly bring two adverse effects on the metal layer of the semiconductor device. First, the aluminum film on the surface of the electrostatic chuck easily affects the heat conduction between the wafer to be processed and the electrostatic chuck placed on the electrostatic chuck, resulting in a local temperature increase of the wafer. Depending on the degree of expansion, it will release stress ...

Claims

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Application Information

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IPC IPC(8): C23C14/56C23C14/14C23C14/34
CPCC23C14/564C23C14/14C23C14/34
Inventor 谭林周军吴坚吴浔吴浩常传栋
Owner HUA HONG SEMICON WUXI LTD
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