Semiconductor process chamber and semiconductor process equipment

Abstract

The present invention provides a process chamber in semiconductor process equipment and semiconductor process equipment, wherein, the process chamber includes a chamber body, an air inlet device, and a base arranged inside the chamber body, and the process chamber The gas device includes a plurality of air intake pipelines, which are arranged around the base and are all located under the base, and each of the air intake pipelines is provided with a flow control mechanism. In the present invention, by designing an air intake device, the process gas can be more accurately controlled and dispersed in the process chamber, and the gas movement in the process area is more uniform, thereby eliminating the influence of the cold pump bias on the air flow movement in the process chamber, thereby achieving The purpose of improving the uniformity of deposited film, enhancing the process capability of equipment and improving product quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process chamber in semiconductor process equipment and semiconductor process equipment. Background technique [0002] In the research of integrated circuits, the use of copper instead of aluminum as the leads of integrated circuits has attracted widespread attention in the industry. In order to prevent copper from diffusing in silicon and silicon oxides and reacting with silicon, an anti-diffusion layer is usually added between copper and the circuit. Metal nitrides (such as TaN / TiN) have excellent thermal stability, good electrical conductivity, high melting point, and high lattice and grain boundary stability, so they have become the material of choice for the anti-diffusion layer. [0003] The use of PVD magnetron sputtering to deposit metal nitride films (such as TaN / TiN) has many advantages: simple process, good repeatability, and a film with a high cr...

AI Technical Summary

Problems solved by technology

The air flow in the cavity enters the cavity 2 from the air inlet 8, and enters the process area above the base 7 through the bent air flow channel between the lining 3 and the snap ring 4, and the base 7 is close to the two sides of the air inlet 8 and the cold pump 9. There are different gas flows on the side, resulting in uneven direction and speed of gas movement in the process area above the susceptor 7, thereby affecting the uniformity of the deposited film thickness, and the stoichiometric ratio of metal and nitrogen in the metal nitride film is easily affected by cooling The resistivity is unstable due to the influence of the pumping speed change

In addition, limited by the current chamber structure and air intake method, a large amount of Ar / N enters the chamber 2 and is directly pumped away by the cold pump 9, and only a small amount of process gas passes through the bend between the lining 3 and the snap ring 4. The folded air flow channel enters the process area above the base 7, and the process cost is relatively high

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