Gas transmission pipelines and semiconductor equipment

Abstract

The present invention provides a gas delivery pipeline and semiconductor equipment. The gas delivery pipeline is used to deliver gas to a reaction chamber of a semiconductor equipment. The gas delivery pipeline includes at least two branch pipelines and at least one 135° elbow, corresponding to Two adjacent branch pipelines are connected through at least one 135° elbow, and the Reynolds number of the gas in the gas transmission pipeline is less than 1000. The elbow in the present invention is a smooth arc-shaped 135° elbow, which can reduce the pressure drop near the inner wall when the mixed gas passes through the elbow in the gas delivery pipeline (the pressure coefficient is negative). The Reynolds number in the pipeline is less than 1000, which further reduces the local temperature drop caused by the pressure drop at the elbow, and can minimize the phenomenon that the mixed gas condenses and forms liquid droplets in the gas delivery pipeline, thereby eliminating the phenomenon of liquid droplets caused by liquid droplets. Defects are formed on the surface of the wafer, which improves product yield and reduces production costs.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a gas delivery pipeline and semiconductor equipment. Background technique [0002] Epitaxial growth is to grow a single crystal layer on a single crystal substrate with certain requirements and the same crystal orientation as the substrate, as if the original crystal has extended outward. Epitaxial growth technology was developed in the late 1950s and early 1960s. At that time, in order to manufacture high-frequency and high-power devices, it was necessary to reduce the collector series resistance, and the material was required to withstand high voltage and high current. Therefore, it was necessary to grow a thin high-resistance epitaxial layer on a low-resistance substrate. The epitaxially grown new single crystal layer can be different from the substrate in terms of conductivity type, resistivity, etc., and can also grow multilayer single crystals with different th...

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Problems solved by technology

[0010] 2. React with oxygen molecules and water molecules in the reaction chamber to form a granular residue a on the substrate (as shown in Figure 1), and the number of residues a with a diameter greater than 0.12 μm exceeds 10,000 , so that the residue a requires special process steps to remove, increasing the cost of production

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