Wafer transmission device and method for reaction chamber

Abstract

The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a wafer transmission device and method for a reaction chamber of the epitaxial growth equipment.The device comprises the reaction chamber and a carrying chamber which are both hollow square cavity structures, the reaction chamber and the carrying chamber are communicated through a gate valve, awafer supporting component is arranged in the reaction chamber, and a mechanical conveying component is arranged in the carrying chamber. The wafer supporting part comprises an inner ring base and anouter ring base, the main body of the inner ring base is a disc, a concentric boss is arranged on the lower end face of the disc, and the overall longitudinal cross section of the inner ring base isT-shaped. The outer ring base is in a circular ring shape, the inner ring of the outer ring base is stepped, the step size of the inner ring is matched with the outer edge size of the inner ring base,and the inner ring base is embedded in the outer ring base. The invention further provides the wafer transmission method for the reaction chamber. The wafer conveying device is easy to operate, is better in conveying stability and lower in wafer falling rate, and can satisfies the conveying requirements of the wafers of different sizes.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a wafer transmission device and a transmission method for a reaction chamber of epitaxial growth equipment. Background technique [0002] The epitaxial growth device mainly picks up the wafer from the magazine through the wafer pick-up mechanism, transports the wafer to the reaction chamber, and places it on a rotatable base. The reaction gas is introduced onto the wafer in a direction parallel to the wafer, and the surface of the wafer Perform epitaxial growth. [0003] The pursuit of larger-diameter epitaxial processing capabilities and higher-quality epitaxial growth effects has become the mainstream of the development of epitaxial wafer production in the world. The current pick-up device using Bernoulli rods is only suitable for small-diameter wafers and cannot meet the needs of wafers of 12 inches and above. [0004] In order to avoid damage t...

AI Technical Summary

Problems solved by technology

The current pick-up device using Bernoulli rods is only suitable for small-diameter wafers and cannot meet the needs of 12-inch and larger wafers

Images