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Gas infrared detector

An infrared detector and gas technology, applied in the field of photoelectric detection, can solve problems such as reducing the selectivity of detectors, and achieve the effect of enhancing absorption and improving performance

Inactive Publication Date: 2020-01-03
ZHEJIANG SANHUA INTELLIGENT CONTROLS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, existing graphene phototransistors can achieve broad-spectrum absorption and cannot only absorb light waves of characteristic wavelengths, which reduces the selectivity of detectors.

Method used

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Embodiment Construction

[0020] Embodiments of the invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the figures are exemplary and are intended to explain the invention and should not be construed as limiting the invention. In describing the invention, it is to be understood that the terms "central", "transverse", "length", "width", "upper", "lower", "inner", "outer", "circumferential" etc. indicate The orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, which are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be configured in a specific orientation, and operation and therefore should not be construed as limiting the invention. Moreover, the terms "first" and "second" are used for descriptive p...

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Abstract

The invention discloses a gas infrared detector. The gas infrared detector comprises a first electrode, a substrate, an isolation layer, a second electrode, a third electrode and a graphene thin film;the substrate is arranged on the upper surface of the first electrode; the isolation layer is arranged on the upper surface of the substrate; the second electrode and the third electrode are arrangedon the upper surface of the isolation layer and are spaced from each other; the graphene thin film is overlaid on the upper surface of the isolation layer, which is positioned between the second electrode and the third electrode, the inner lateral surface of the second electrode, which is opposite to the third electrode, the inner lateral surface of the third electrode, which his opposite to thesecond electrode, the upper surface of the second electrode and the upper surface of the third electrode; and the graphene thin film on the upper surface of the isolation layer is of a periodic nano structure. According to the gas infrared detector disclosed by the invention, absorption on infrared light is reinforced, a specific infrared wavelength can be only absorbed, and performance of the detector is improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a gas infrared detector. Background technique [0002] A gas sensor is a gas sensing device that uses the relationship between gas concentration and absorption intensity to identify gas components and determine their concentration based on the selective absorption characteristics of near-infrared spectra of different gas molecules. In the related art, the graphene phototransistor is an infrared photodetector of photoelectric effect, which includes a source electrode, a drain electrode and a gate electrode. When a voltage is applied between the source electrode and the drain electrode, when there is no light, a dark area is generated in the graphene film. Current, the photogenerated carriers generated by the incident infrared light wave absorbed by the graphene film are separated by the electric field between the source and drain electrodes to form a photogenerated...

Claims

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Application Information

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IPC IPC(8): G01N21/3504
CPCG01N21/3504
Inventor 万霞黄隆重尹斌黄宁杰
Owner ZHEJIANG SANHUA INTELLIGENT CONTROLS CO LTD
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