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High-precision dual-mass silicon micro-gyro device based on tunnel magneto-resistance effect

A technology of tunnel magnetoresistance and silicon micro gyroscope, which is applied in the field of measuring instruments, can solve the problems of silicon micro gyroscopes that are difficult to take to a higher level.

Pending Publication Date: 2019-12-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by the way of capacitance detection, it is difficult for traditional silicon micro gyroscopes to improve the important indicators such as stability and sensitivity to a higher level. Therefore, the application of silicon micro gyroscopes is still concentrated in the mid-end and low-end fields.

Method used

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  • High-precision dual-mass silicon micro-gyro device based on tunnel magneto-resistance effect
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  • High-precision dual-mass silicon micro-gyro device based on tunnel magneto-resistance effect

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Embodiment Construction

[0048] In order to further understand the present invention, the present invention will be further explained below in conjunction with the accompanying drawings.

[0049] Such as figure 1 As shown, a high-precision dual-mass silicon micro-gyroscope device based on the tunnel magnetoresistance effect is composed of a two-layer structure, the upper layer is a silicon sensitive structure, and the lower layer is a glass substrate with metal electrodes and a tunnel magnetoresistance detection module. structure.

[0050] The superstructure includes a first mass module 1a and a second mass module 1b arranged symmetrically to each other; a first drive comb module 2a and a second drive comb module 2b symmetrically arranged; a first drive detection comb arranged symmetrically The tooth module 3a and the second drive detection comb module 3b; and the symmetrically arranged first support beam module 23a and the second support beam module 23b;

[0051] The first driving comb module 2a is...

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Abstract

The invention discloses a high-precision dual-mass silicon micro-gyro device based on a tunnel magneto-resistance effect, and the device comprises upper and lower layers, wherein the upper layer is asilicon-sensitive structure, and the lower layer is a glass substrate structure provided with a metal electrode and a tunnel magneto-resistance detection module; the structure of the upper layer is bonded to the structure of the lower layer through anchor points and consists of two completely identical gyroscope substructures, a pair of support beams and a pair of anchor points; and the structureof the lower layer consists of the tunnel magneto-resistive detection module, a glass substrate, a driving electrode, a driving detection electrode, an orthogonal electrode, a coil input interface, acoil input electrode, a coil output interface, a coil output electrode, a common electrode and a signal lead. The invention proposes that the silicon micro gyroscope uses a miniature coil as an excitation mechanism having stable magnetic field, controllable field strength and high degree of integration, and at the same time, uses a differential tunnel magneto-resistance detection structure havingthe advantages such as strong resistance to common mode errors, high sensitivity and high measurement accuracy.

Description

technical field [0001] The invention relates to the technical field of measuring instruments for micro-electromechanical systems (MEMS) and micro-inertial navigation, in particular to a high-precision dual-mass silicon micro-gyroscope device based on the tunnel magnetoresistance effect. Background technique [0002] Silicon micro gyroscopes have excellent performances such as miniaturization and integration, high reliability, low power consumption, easy digitization and intelligence, and good dynamic performance. With the continuous improvement of performance, silicon micro gyroscopes have replaced some traditional gyroscopes, and have been widely used in consumer electronics, automobile industry, biomedicine and other fields. However, limited by the way of capacitive detection, it is difficult for traditional silicon micro gyroscopes to improve the important indicators such as stability and sensitivity to a higher level. Therefore, the application of silicon micro gyroscope...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01C19/5656
CPCG01C19/5656
Inventor 杨波李成郭鑫高小勇
Owner SOUTHEAST UNIV
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