Quantitative analysis method of verification graph for OPC verification

Abstract

The invention discloses a quantitative analysis method of a verification graph for OPC verification. The quantitative analysis method comprises the following steps: step 1, creating a graph index of the verification graph and storing the graph index into a database; step 2, counting error points, intercepting and comparing graphic blocks, calculating characteristic values, and creating error pointindexes corresponding to the characteristic values; storing the error point index, the corresponding comparison graphic block and the feature value into a database; step 3, performing statistical analysis, including: step 31, searching an error point index, and performing statistics to obtain a frequency list corresponding to each characteristic value; step 32, normalizing the frequency list, andcarrying out two-dimensional integral calculation to obtain a distribution value of a characteristic value; step 4, generating a test pattern, including: step 41, obtaining an error point index matrix according to the distribution value of the feature value; and step 42, obtaining a group of error point indexes by adopting Monte Carlo sampling, searching corresponding comparison graph blocks, andgenerating the test graph. According to the invention, time and labor can be saved, and the OPC process can be improved more accurately.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a quantitative analysis method for a verification pattern (pattern) used for optical proximity correction (Optical Proximity Correction, OPC) verification (verification). Background technique [0002] In the publishing process of the mask for semiconductor manufacturing, it is generally necessary to use OPC technology to correct the mask pattern. After imaging with the OPC corrected mask, the target pattern formed on the semiconductor substrate can meet the target requirements and eliminate Distortion or distortion in an object pattern due to optical proximity effects. [0003] The OPC-corrected mask needs to be verified by OPC before being published to simulate whether the OPC-corrected mask is correct. [0004] Various problems are usually encountered in the OPC verification process, and the problems need to be checked and solved one by one, whic...

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Problems solved by technology

usually, figure 1 The line-end problems shown need to improve the OPC process to meet the requirements, or require the assistance of a process integration engineer (PIE) to find and confirm on the wafer (wafer), which is time-consuming and laborious, and the new OPC process may have adverse effects on other structures, resulting in OPC result worse

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