A planarization processing method and a preparation method of a three-dimensional memory

A processing method and planarization technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of aggravating dent damage, dent damage, and high cost, so as to avoid dent damage, shorten time, and reduce production cost effect

Active Publication Date: 2021-02-26
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the planarization treatment by CMP process, it has the following obvious disadvantages: the cost of over polishing (Over Polish, OP) processing step is high and the time is long; And when two CMP treatments are required, the pitting damage produced in the first process will further aggravate the problem of pitting damage in the second process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A planarization processing method and a preparation method of a three-dimensional memory
  • A planarization processing method and a preparation method of a three-dimensional memory
  • A planarization processing method and a preparation method of a three-dimensional memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.

[0033] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a planarization processing method and a preparation method of a three-dimensional memory. The method includes: providing a laminated structure having a plurality of through holes extending downward from an upper surface; the plug filling the through holes and having at least one protruding structure The overfilled part of the surface; the overfilled part of the plug is removed by etching process; part of the top stack layer of the stacked structure is removed; the upper surface of the plug is planarized, so that the The top surface of the plug is coplanar with the top surface of the stack remaining after removal of a portion of the top stack.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a planarization treatment method and a preparation method of a three-dimensional memory. Background technique [0002] In the semiconductor process, a planarization process is often used to obtain a relatively flat surface, which provides a reliable basis for subsequent processes. Chemical Mechanical Polish (CMP) is the most commonly used planarization process at this stage. It combines the advantages of chemical polishing and mechanical polishing, and can obtain a more perfect surface while ensuring material removal efficiency, and Surface roughness from the nanometer level to the atomic level can be achieved. [0003] In the preparation process of the three-dimensional memory, the channel structure and other filling structures are generally formed in the channel via (Chanel Hole, CH) to realize the corresponding functions; Overfilling is generated to ensure that the fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 杨俊铖蒋阳波方青春
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap