Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Image sensor and method of forming the same

A technology for image sensors and pixel areas, applied in semiconductor devices, electric solid devices, radiation control devices, etc., can solve problems such as poor performance of image sensors and light crosstalk

Active Publication Date: 2021-09-14
淮安西德工业设计有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, with the improvement of device integration, the density of pixel areas in the image sensor increases, and the light between adjacent pixel units is prone to crosstalk, which makes the performance of the image sensor poor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor and method of forming the same
  • Image sensor and method of forming the same
  • Image sensor and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] As mentioned in the background, prior art image sensors perform poorly.

[0028] refer to figure 1 , figure 1 It is a structural schematic diagram of an image sensor. The image sensor includes a plurality of pixel areas, and the pixel area includes: a substrate 100, a photosensitive structure 120, an interconnection structure 130, and a light receiving structure. The substrate 100 has an opposite first surface and a second surface, the photosensitive structure 120 is located in the substrate 100, the photosensitive structure 120 is exposed on the first surface of the substrate 100, and the interconnect structure 130 is in contact with the first surface of the substrate 100; The light-receiving structure is located on the second surface of the substrate 100, and the light-receiving structure includes a lens layer, a filter layer and a grid layer 140, the lens layer is located on the surface of the filter layer, and the grid layer 140 is located between adjacent filter l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An image sensor and its forming method, the image sensor includes: a substrate, the substrate includes a first pixel area and a second pixel area adjacent to each other; a first filter layer located on the substrate surface of the first pixel area; The second filter layer on the substrate surface of the second pixel area, the second filter layer is flush with the top of the first filter layer; the first lens layer on the surface of the first filter layer; the second filter layer on the second filter layer The second lens layer on the surface, the height of the second lens layer is greater than the height of the first lens layer, the second lens layer includes a first bottom lens layer and a first convex lens layer located on the surface of the first bottom lens layer, so The included angle between the side wall of the first bottom lens layer and the bottom surface of the first bottom lens layer is a preset angle. The performance of the image sensor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. CMOS image sensor has the advantages of simple process, easy integration of other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology. At present, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0003] CMOS image sensors include front illuminated (FSI) image sensors and back illuminated (BSI) image sensors. In the back-illuminated image sensor, light is incident on the photodiode in the image sensor from the back of the image sensor, which avoids the shading of light by the back-end circuit, and has higher sensitivity than...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14621H01L27/14625
Inventor 黄增智夏睿李天慧黄晓橹
Owner 淮安西德工业设计有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com