A kind of super barrier diode device

Abstract

A super-barrier diode device belongs to the technology in the field of semiconductor power devices. Its cellular structure includes a cathode metal, an N+ semiconductor substrate, and an N-semiconductor drift region arranged sequentially from bottom to top. A P-type semiconductor base region is set on the left side of the top layer of the N-semiconductor drift region, and a P-type semiconductor base region is set on the left side of the top layer of the P-type semiconductor base region. The P+ semiconductor contact region and the N+ semiconductor source region in close contact are arranged side by side in order from left to right; the upper surface on the right side of the N+ semiconductor source region, the upper surface of the P-type semiconductor base region on the right side of the N+ semiconductor source region, and the P-type semiconductor base region A trench structure is set on the upper surface of the N-semiconductor drift region on the right; a gate structure is set on the trench structure, and the gate structure includes a dielectric layer, polysilicon and anode metal set from bottom to top, and the bottom surface of the polysilicon is lower on the top of the trench structure; the anode metal is arranged on the upper surface of the super barrier diode device. The invention improves the forward conduction current level and voltage blocking ability of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a super barrier diode device structure. Background technique [0002] The anthropocene has entered the 21st century. Although various forms of new energy sources have emerged, such as wind energy, nuclear energy, solar energy, and geothermal energy, the world's energy production and consumption are still dominated by fossil energy, and fossil energy will remain in the long run. For a period of time, it occupies the most important seat of many energy needs of human beings. The large and long-term use of fossil energy will inevitably lead to a series of problems, which are closely related to the deterioration of global environmental problems such as global warming. A considerable proportion of fossil energy is converted into electricity. Electric energy is one of the main forms of energy that can be directly used by human beings, and the improvemen...

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Problems solved by technology

[0006] Aiming at the problems of low forward conduction current density and poor reverse blocking ability of the above-mentioned traditional super-barrier diode, the present invention proposes a super-barrier diode device, which can increase the forward conduction current density and improve the voltage blocking ability , the forward conduction current level of the device is significantly improved by setting the trench structure; the multi-subcurrent branch in the conduction state of the device is increased by adding a heterojunction, and the forward conduction current level of the device is improved again; in addition, a superjunction The structure is used to improve the voltage blocking capability of the device while reducing the forward conduction resistance of the device, and obtain a good compromise between reverse blocking and forward voltage drop

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