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Injection Locked Diode Lasers

A technology of injection locking and lasers, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of unfavorable integration and miniaturization engineering application requirements, and achieve the effect of engineering application value and stable output

Active Publication Date: 2020-09-01
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This involves the connection and use of three devices, which is not conducive to the engineering application requirements of integration and miniaturization

Method used

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  • Injection Locked Diode Lasers
  • Injection Locked Diode Lasers
  • Injection Locked Diode Lasers

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Embodiment Construction

[0017] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present invention, and to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, the following describes the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings For further detailed explanation.

[0018] In the description of the present invention, unless otherwise specified and limited, it should be noted that the term "connection" should be understood in a broad sense, for example, it can be a mechanical connection or an electrical connection, or it can be the internal communication of two elements, it can be Directly connected or indirectly connected through an intermediary, those skilled in the art can understand the specific meanings of the above terms according to specific situations.

[0019] Such as figure 1 and...

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Abstract

The invention provides an injection-locked semiconductor laser, which comprises a main laser, a first collimating lens, a total reflecting mirror, a semi-reflecting semi-transmitting mirror, a secondcollimating lens, a slave laser, a focusing lens and an optical fiber, wherein the laser light emitted by the main laser is shaped into a first parallel beam through the first collimating lens, the first parallel beam shoots to the semi-reflecting semi-transmitting mirror through the total reflecting mirror, the reflected light of the semi-reflecting semi-transmitting mirror is injected and lockedinto the slave laser through the second collimating lens, the injected and locked laser of the slave laser is shaped into a second parallel beam through the second collimating lens, and the transmitted light, which passes through the semi-reflecting semi-transmitting mirror, of the second parallel beam is coupled to the optical fiber through the focusing lens and then outputted through the optical fiber. The injection locked semiconductor laser is more integrated and miniaturized, and has more engineering application values. The injection locked semiconductor laser is coupled through a spaceoptical element, so that the polarization state of the laser itself and the fixed optical path difference of the main and slave lasers can be highly maintained, and the output of the laser is more stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser manufacturing, in particular to an injection-locked semiconductor laser. Background technique [0002] At present, most engineering quantum security communication networks use weakly coherent light sources to construct quantum key distribution systems. These weakly coherent light sources work in the gain switch mode, are driven by narrow pulse electrical signals, output laser, and then pass through the attenuator and so on. Light energy decays to the single photon level. Although this type of light source is not an ideal single-photon source, it is efficient and practical, and is suitable for the current engineering development needs of quantum secure communication. [0003] At present, the gain-switched semiconductor lasers suitable for quantum secure communication networks are mostly based on high-speed DFB lasers. One of the performance requirements for such lasers is low jitter i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/065H01S5/12
CPCH01S5/0657H01S5/12
Inventor 冯琛张靖林灵段利华吴寸雪
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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