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Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method

An electronic interconnection and low-temperature technology, which is applied in the direction of circuits, electrical components, and electrical solid devices, can solve limitations and other problems, and achieve the effects of densification, low-temperature interconnection, and excellent low-temperature interconnection characteristics

Active Publication Date: 2018-10-16
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] From the above, the existing electronic interconnection materials have serious limitations when used for low-temperature electronic interconnection

Method used

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  • Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method
  • Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method
  • Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method

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Experimental program
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Effect test

Embodiment 1

[0053] The present embodiment provides a kind of preparation method of dense-loose binary structure particle layer, it comprises the following steps:

[0054] Using laser deposition technology, using high-purity silver target material, deposit a dense particle layer on the surface of the parts to be connected. The process parameters used for deposition are: target base distance 37mm, laser average power 100W, deposition pressure 0.5Pa, deposition time 20min. A dense silver particle layer with a thickness of 22 μm, a density of 90%, and an average particle size of 500 nm was obtained on the surface of the parts to be connected.

[0055] Then, a loose granular layer is deposited on the surface of the dense granular layer of the parts to be connected. The process parameters used for deposition are: target base distance 50mm, average laser power 100W, deposition pressure 1400Pa, deposition time 8min. Obtain a silver loose particle layer with a thickness of 80 μm, a density of 60%,...

Embodiment 2

[0057] The present embodiment provides the preparation method of silver dense grain layer, and it comprises the following steps:

[0058] Using laser deposition technology, using high-purity silver targets, deposit a dense particle layer on the surface of the parts to be connected. The process parameters used for deposition are: target base distance 90mm, laser average power 15W, deposition pressure 10 -3 Pa, deposition time 30min. On the surface of the parts to be connected, a silver dense particle layer with a thickness of 5 μm, a density of 92%, and an average particle size of 120 nm is obtained, and its surface appearance is as follows: figure 2 shown.

Embodiment 3

[0060] The present embodiment provides the preparation method of silver loose granular layer, and it comprises the following steps:

[0061] Using laser deposition technology, using high-purity silver target material, deposit a loose particle layer on the surface of the parts to be connected. The process parameters used for deposition are: target base distance 67mm, average laser power 25W, deposition pressure 1500Pa, deposition time 10min. Obtain a silver loose particle layer with a thickness of 10 μm, a density of 35%, and an average particle size of 40 nm on the surface of the part to be connected, and its surface appearance is as follows: image 3 shown.

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Abstract

The invention provides a low-temperature electronic interconnection material, a preparation method thereof and a low-temperature electronic interconnection method. The low-temperature electronic interconnection material is a ternary-structure film layer material formed by combining a compact particle layer and a loosen particle layer. The invention also provides the preparation method of the low-temperature electronic interconnection material. The invention also provides the low-temperature electronic interconnection method. The low-temperature electronic interconnection method comprises the following steps of depositing and fabricating the low-temperature electronic interconnection material on a surface of a piece to be connected; and laminating a surface to be connected of the piece to be connected, employing an appropriate energy input means to make the low-temperature electronic interconnection material fully densified, and generating metallurgical bonding with the piece to be connected to achieve low-temperature electronic interconnection of the piece to be connected. The low-temperature electronic interconnection material has excellent low-temperature interconnection characteristic in practice.

Description

technical field [0001] The invention relates to a low-temperature electronic interconnection material, a preparation method thereof and a low-temperature electronic interconnection method, belonging to the technical field of electronic devices. Background technique [0002] Electronic interconnection materials are bridges connecting various components in electronic modules / systems. Electronic interconnection materials represented by tin-based solders play an indispensable role in the modern electronics industry. The performance of the joint formed by the electronic interconnection material directly affects the electrical conduction characteristics and mechanical reliability of the device as a whole. With the continuous emergence of a new generation of electronic devices, traditional solders are increasingly difficult to meet the service requirements in specific occasions, and there is an urgent need for the advent of new electronic interconnection materials. [0003] At pre...

Claims

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Application Information

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IPC IPC(8): H01L23/532H01L21/768
CPCH01L21/76888H01L23/53209
Inventor 刘磊冯斌邹贵生邓钟炀
Owner TSINGHUA UNIV
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