Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Evaluation apparatus and evaluation method

A technology for evaluating devices and oblique directions, which can be applied to measuring devices, instruments, measuring electronics, etc., and can solve problems such as unexpectable discharge suppression effects

Active Publication Date: 2018-07-06
MITSUBISHI ELECTRIC CORP
View PDF18 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the techniques of both Patent Documents 1 and 2, if there is a foreign object on the object to be measured during evaluation, a discharge path through the foreign object may occur, so the discharge suppression effect may not be expected.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Evaluation apparatus and evaluation method
  • Evaluation apparatus and evaluation method
  • Evaluation apparatus and evaluation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0030] figure 1 It is a schematic side view showing the configuration of the evaluation device 1 according to Embodiment 1 of the present invention. figure 1 The evaluation device 1 is a device for evaluating electrical characteristics of an object to be measured. Hereinafter, the object to be measured will be described as a semiconductor device 5 such as a chip, but is not limited thereto, and may be, for example, a semiconductor wafer or the like. Before describing the evaluation device 1 , the semiconductor device 5 as the object to be measured will be described.

[0031] figure 2 It is a schematic plan view showing an example of the structure of the semiconductor device 5 . In Embodiment 1, the semiconductor device 5 is an IGBT (Insulated Gate Bipolar Transistor) with a vertical structure through which a large current flows vertically, that is, in the out-of-plane direction, but it is not limited thereto. The semiconductor device 5 has an active region 19 and a termin...

Embodiment approach 2

[0080] Figure 8 It is a schematic plan view showing a partial structure of an evaluation device 1 according to Embodiment 2 of the present invention, including a probe base 2 and a chuck table 3 . Hereinafter, among the constituent elements described in Embodiment 2, constituent elements that are the same as or similar to those in Embodiment 1 will be assigned the same reference numerals, and mainly different constituent elements will be described.

[0081] The evaluation device 1 according to the first embodiment described above ( Figure 4 ) includes a second gas supply unit 31 . In contrast, as Figure 8 As shown, the evaluation device 1 according to the second embodiment includes a third gas supply unit 32 instead of the second gas supply unit 31 .

[0082] The third gas supply unit 32 can supply gas toward the side wall portion 7 when the side wall portion 7 is close to the chuck table 3 . Thereby, the gas can be blown from the third gas supply part 32 to the side wa...

Deformed example 1

[0093] The evaluation device 1 described in each of Embodiment 1 and Embodiment 2 includes either one of the second gas supply unit 31 and the third gas supply unit 32 , but is not limited thereto. For example, as shown in Modification 1, the evaluation device 1 (not shown) may include both the second gas supply unit 31 and the third gas supply unit 32 . According to such a configuration, the effects of both Embodiments 1 and 2 can be obtained.

[0094] In addition, in Modification 1 and the like, at least any one of the first gas supply part 30 and the second gas supply part 31 may be arranged on the inner wall surface 34 of the side wall part 7 . exist Figure 9 (Schematic cross-sectional view) shows a structure in which four first gas supply parts 30 are respectively arranged on four inner wall surfaces 34 of the side wall part 7 ( Figure 8 ). According to such a structure, since the process of attaching the gas supply part to the mounting plate 16 is unnecessary, the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a technique capable of preventing occurrence of partial discharge. An evaluation apparatus includes a probe disposed on an undersurface of an upper component; a sidewall part disposed on the undersurface of the upper component and enclosing sides of the probe; and a first gas supplying part. The first gas supplying part is capable of supplying a gas to a to-be-measured object that is placed on a stage when the sidewall part comes in proximity to the stage, and to a space enclosed by the stage, the sidewall part, and the upper component when the sidewall part is in contact with thestage.

Description

technical field [0001] The present invention relates to an evaluation device and an evaluation method for evaluating electrical characteristics of an object to be measured. Background technique [0002] There is known an evaluation device that evaluates electrical characteristics of an object to be measured such as a semiconductor wafer or a semiconductor device that is a semiconductor chip singulated from a semiconductor wafer. When evaluating electrical characteristics, the evaluation device uses a probe for electrical input and output after the installation surface of the object to be measured is brought into contact with the mounting surface of the chuck table by vacuum suction, etc., and fixed on the mounting surface. It is in contact with an electrode provided on a part of the non-installed surface of the object to be measured. When the object to be measured is a semiconductor device with a vertical structure in which a large current flows in the vertical direction, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/26G01R31/2863G01R31/2879G01R31/2891G01R1/073G01R31/2608G05B15/02
Inventor 冈田章山下钦也上野和起野口贵也
Owner MITSUBISHI ELECTRIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com