Metal-oxide-semiconductor transistor and method for manufacturing the same

Abstract

The invention relates to a metal oxide semiconductor transistor. The metal oxide semiconductor transistor includes a P-type well region, a source region and a drain region formed on the surface of the P-type well region, a gate formed on the source region and the drain region and on the P-type well region an oxide layer, a gate polysilicon formed on the gate oxide layer, and a polysilicon oxide layer formed on the surface of the gate polysilicon, the gate polysilicon comprising at least part of the gate oxide layer above the source region A first portion of the drain region, a second portion at least partially located above the gate oxide layer of the drain region, and a third portion connected between the first portion and the second portion, the third portion includes a detour structure such that The length of the meandering structure is greater than the distance between the first portion and the second portion.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing technology, in particular, to a metal oxide semiconductor transistor and a manufacturing method thereof. Background technique [0002] Metal-oxide-semiconductor (MOS) transistors are basic devices in semiconductor manufacturing, and are widely used in various integrated circuits. However, one of the main problems currently faced by the current fabrication methods of metal-oxide-semiconductor (MOS) transistors is that as the feature size of the device shrinks (gate width), the length of the channel becomes shorter and shorter, and the same Under the concentration of the well region, the shorter the channel length, the easier it is for the source and drain to punch through, resulting in greater leakage, which affects the reliability of the device. If a multi-gate structure is adopted, the channel length will increase significantly, but it will inevitably lead to an incre...

AI Technical Summary

Problems solved by technology

However, one of the main problems currently faced by the current fabrication methods of metal-oxide-semiconductor (MOS) transistors is that as the feature size of the device shrinks (gate width), the length of the channel becomes shorter and shorter, and the same Under the concentration of the well region, the shorter the channel length, the easier it is for the source and drain to punch through, resulting in greater leakage, which affects the reliability of the device

If a multi-gate structure is adopted, the channel length will increase significantly, but it will inevitably lead to an increase in channel resistance and an increase in the on-resistance of the device, thereby affecting the reliability of the device.

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