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Digital phase shifter

A digital phase shifter and digital phase shifter technology, applied in the field of digital phase shifters, can solve the problems of unfavorable phase shifter integration, poor phase shift accuracy, and reduced area, and achieve improved phase shift accuracy, low phase error, and high The effect of power capacity

Inactive Publication Date: 2017-11-07
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology uses a special type of signal called quadrature amplitude modulation (QAM) that allows signals transmitted through antennas at different angles to have equal amplitudes but opposite phases. By adjusting these waves' time delays based on their needs, it can improve the precision and reliability of radio wave transmission over long distances or even across space. It also makes use of advanced materials like ceramics instead of traditional metals used in previous designs due to its higher energy storage capabilities compared to other types of devices.

Problems solved by technology

Technological Problem: Current phase shaping techniques for electronic waveforms use Gallium Arsenic High Electron Mobility Transistors (GAN), but they require expensive materials like GA's and SiC due to their low heat resistance and small size. Additionally, current methods result in less precise phase changes compared to other technologies that could improve certain aspects of these types of technology.

Method used

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] In this embodiment, the digital phase shifter is a digital phase shifter designed based on a GaN-based MMIC process, and the digital phase shifter includes: a GaN substrate; a digital phase shifter circuit formed on the GaN substrate; wherein, the digital phase shifter The phase circuit adopts a digital phase-shifting circuit with an all-pass structure, and the digital phase-shifting circuit with an all-pass structure uses an AlGaN / GaN heterojunction high electron mobility field effect transistor as a switching device. Compared with GaAs materials, GaN materials have the characteristics of wider band gap, larger electron saturation drift rate, higher critical breakdown field strength, etc. Since the thermal leakage ...

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Abstract

The invention discloses a digital phase shifter. The digital phase shifter comprises a digital phase shifting circuit and a GaN base, wherein the digital phase shifting circuit is positioned on the GaN base; the digital phase shifting circuit is an all-pass digital phase shifting circuit; and the all-pass digital phase shifting circuit has a high-electronic-mobility field effect transistor (HEMT) having a AlGaN/GaN heterojunction as a switching device. By means of the digital phase shifter disclosed by the invention, performances of transceiving components in military systems and equipment, such as phase array radar, communication, electronic countermeasure and intellectual weapons, are improved; and furthermore, the phase shifting precision is increased.

Description

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Claims

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Application Information

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Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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