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Ingot casting furnace capable of improving average conversion efficiency of silicon ingot

A technology of conversion efficiency and ingot casting furnace, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the uneven temperature distribution of the thermal field at the corner, affect the average conversion efficiency of silicon ingots, and affect the dispersion of silicon ingot efficiency To improve the average conversion efficiency, improve the competitiveness of use, and improve the dispersion

Inactive Publication Date: 2017-11-07
扬州续笙新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the existing heat field of ingot casting furnace, the crucible inside the heat field is designed as a square, such as figure 1 As shown, this structure results in the production of finished silicon ingots that are also square. Since the two adjacent faces of the corner ingots at the four corners of the silicon ingot are close to the crucible, they are greatly affected by impurities from the crucible and the boundary effect of the thermal field. It is easy to produce corner ingots that are greatly affected by the boundary effect of the thermal field and have low conversion efficiency, and the temperature distribution of the thermal field at the corner is uneven, resulting in relatively low conversion efficiency, affecting the discreteness of the efficiency of the silicon ingot, and thus affecting the average conversion of the entire silicon ingot Efficiency: Since the thermal field of the ingot casting furnace was originally designed as a quadrilateral, corner ingots must appear in the silicon ingots produced, and the conversion efficiency of the corner ingots is low, resulting in an average conversion efficiency of only about 18.6% for the whole ingot. The structure of the furnace heat field is re-innovated and designed

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  • Ingot casting furnace capable of improving average conversion efficiency of silicon ingot
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  • Ingot casting furnace capable of improving average conversion efficiency of silicon ingot

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Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] Such as Figure 2-5 Shown: this embodiment is a kind of ingot casting furnace that improves the average conversion efficiency of silicon ingot, comprises furnace body 1 and is arranged on the crucible 5 inside furnace body 1, and the crucible 5 in the present embodiment is quartz material, and silicon ingot 6 is positioned at In the crucible 5, a graphite column 14 is vertically arranged at the bottom inside the furnace body 1, and a heat exchange platform 12 is arranged horizontally on the top of the graphite column 14. The crucible 5 is placed on the heat exchange platform 12, and the heat exchange platform 12 mainly plays a role in heat conduction. role, between the periphery of the crucible 5 and the inner wall of the furnace body 1, a graphite shield layer 4, a heater layer 3 and a heat preservation cover layer 2 are arranged successively....

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Abstract

The invention discloses an ingot casting furnace capable of improving average conversion efficiency of a silicon ingot. The ingot casting furnace comprises a furnace body and a crucible, wherein the crucible is arranged in the furnace body; a graphite vertical column is vertically arranged at the bottom part of the interior of the furnace body; a heat exchange platform is horizontally arranged at the top part of the graphite vertical column; the crucible is placed on the heat exchange platform; a graphite protective plate layer, a heater layer and a heat insulation cover layer are sequentially arranged between the periphery of the furnace body and the wall surface of the interior of the furnace body; the cross section of the crucible is in an octagon shape; the octagon-shaped crucible comprises four crucible walls and four crucible chamfer walls; each crucible chamfer wall is positioned between the two adjacent crucible walls; the cross sections of the graphite protective plate layer and the heater layer have the same shape with the cross section of the crucible; the graphite protective plate layer and the heater layer are respectively formed with chamfer layer surfaces corresponding to the crucible chamfer walls. The ingot casting furnace has the advantages that the four corners of the existing quadrilateral heat field are chamfered, the size of the heat field is increased, the quadrilateral heat field is upgraded into the octagon-shaped heat field, the production of corner ingots is avoided, and the average conversion efficiency of the whole silicon ingot is improved.

Description

technical field [0001] The invention relates to an ingot furnace, in particular to an ingot furnace for improving the average conversion efficiency of silicon ingots, and belongs to the technical field of solar polysilicon ingot thermal field. Background technique [0002] In the existing heat field of ingot casting furnace, the crucible inside the heat field is designed as a square, such as figure 1 As shown, this structure results in the production of finished silicon ingots that are also square. Since the two adjacent faces of the corner ingots at the four corners of the silicon ingot are close to the crucible, they are greatly affected by impurities from the crucible and the boundary effect of the thermal field. It is easy to produce corner ingots that are greatly affected by the boundary effect of the thermal field and have low conversion efficiency, and the temperature distribution of the thermal field at the corner is uneven, resulting in relatively low conversion eff...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 李剑波袁为进蔡彬
Owner 扬州续笙新能源科技有限公司
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