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Organic field effect transistor material based on oxa-condensed ring, and synthetic method and application thereof

A field-effect transistor and organic field technology, applied in the field of organic field-effect transistor materials and their synthesis, can solve the problems of reducing material solvent, increasing, unfavorable transformation and application, etc., achieve good solubility, improve mobility, and effectively Conducive to the effect of film-forming control

Active Publication Date: 2017-05-31
SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the molecular rigidity is too strong, the accumulation between molecules will increase, which wil...

Method used

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  • Organic field effect transistor material based on oxa-condensed ring, and synthetic method and application thereof
  • Organic field effect transistor material based on oxa-condensed ring, and synthetic method and application thereof
  • Organic field effect transistor material based on oxa-condensed ring, and synthetic method and application thereof

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Embodiment 1

[0029] A kind of synthetic method of organic field effect transistor material based on oxygen heterofused ring class is:

[0030] The first step: the synthesis of compound 1: in a 250mL round bottom flask, add diisopropylamine (4.76 g, 46.1 mmol) and 100 mL tetrahydrofuran under the protection of argon, cool the mixed solution to -78 ° C, and then slowly add Add 19.2 mL of a hexane solution containing 2.4 M n-butyllithium dropwise. After the dropwise addition, continue to stir for 40 minutes, then dissolve ethyl thiophene-3-carboxylate (6.01 g, 38.4 mmol) in 500 mL of tetrahydrofuran and slowly drop Added to the mixed solution, after the dropwise addition, the mixed solution continued to stir for 1 hour, then, 46.1 mL of hexane solution containing 1 M trimethyltin chloride was added dropwise to the reaction solution, and after 1 hour of reaction, the reaction solution was Warm up to room temperature and stir for 5 hours. After the reaction is complete, extract with ethyl aceta...

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Abstract

The invention provides an organic field effect transistor material based on an oxa-condensed ring, and a synthetic method and application thereof. The method comprises the following preparation steps of reacting diisopropylamine, tetrahydrofuran, n-butyllithium, thiophene-3-ethyl formate, and trimethylchlorostannane; adding 1,4-dibromo-2,5-dimethoxy, tetrakispalladium and anhydrous tetrahydrofuran for reacting; adding 1-bromine-4-hexyl benzene, the anhydrous tetrahydrofuran and an n-butyllithium solution for reacting; mixing with dichloromethane; adding a boron tribromide solution for reacting; reacting with the tetrahydrofuran, the n-butyllithium, and a trimethylchlorostannane solution; reacting with 4,7-dibromo-5,6-difluoro-2,1,3-diazosulfide, tris(dibenzylideneacetone)dipalladium, tris(o-methylphenyl)phosphorus, and anhydrous toluene to obtain the organic field effect transistor material based on the oxa-condensed ring. The invention provides a series of field effect transistor materials capable of realizing high electronic mobility, small reorganization energy and better solubility through selecting different condensed ring units to polymerize with a receptor unit.

Description

technical field [0001] The invention relates to the field of field effect transistors, in particular to an organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application. Background technique [0002] Now that people have entered the information age, various electronic devices (such as mobile phones, computers, etc.) can be seen everywhere in our daily life, and field effect transistors are one of the extremely important electronic components. Compared with traditional field-effect-free crystal materials, organic field-effect transistor materials have the advantages of low cost, simple process, easy modification of material energy levels, good solubility, good flexibility and large-area flexible devices, and are more and more popular. s concern. However, the carrier mobility of current organic field effect transistor materials is far behind that of non-field effect transistor materials. How to improve the mobility of cur...

Claims

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Application Information

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IPC IPC(8): C07D495/22H01L51/05H01L51/30
CPCC07D495/22H10K85/6576H10K85/6574H10K85/657H10K10/46
Inventor 李永玺吴福鹏廖良生
Owner SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
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