A lower electrode, dry etching equipment

An electrode and voltage technology used in the display field

Inactive Publication Date: 2019-06-07
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Embodiments of the present invention provide a lower electrode and dry etching equipment. Applying the lower electrode to dry etching can solve the problem in the prior art that the lower electrode produces the same suction force on all parts of the substrate to be etched.

Method used

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  • A lower electrode, dry etching equipment
  • A lower electrode, dry etching equipment
  • A lower electrode, dry etching equipment

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Embodiment 1

[0039] An embodiment of the present invention provides a lower electrode, referring to Figure 5 As shown, the lower electrode includes: a conductive layer 9, and a plurality of air holes 2 running through the lower electrode; a plurality of protrusions 8 are provided on the upper surface of the lower electrode; the conductive layer 9 includes: a first conductive unit 10 and a The second conductive unit 11 on the periphery of the unit 10, the first conductive unit 10 and the second conductive unit 11 are not in contact with each other; Contour limited.

[0040]The above-mentioned second conductive units may be continuously distributed on the periphery of the first conductive unit, or may be distributed at intervals on the periphery of the first conductive unit, which is not specifically limited here. The distribution of the above-mentioned pores is not limited, and in practice it is mostly according to figure 1 The word distribution shown.

[0041] In the above-mentioned lo...

Embodiment 2

[0053] The embodiment of the present invention provides a kind of dry etching equipment, refer to Figure 9 As shown, the dry etching equipment includes: a voltage generating device 15 and a gas generating device (not shown in the figure), and the dry etching equipment also includes: any one of the lower electrodes 1 provided in Embodiment 1; The generating device 15 is used to provide voltage to the first conductive unit 10 and the second conductive unit 11 of the lower electrode 1, and the voltage provided to the first conductive unit 10 is greater than the voltage provided to the second conductive unit 11; the gas generating device is used for Cooling gas is fed upwards from the bottom of the lower electrode through the pores of the lower electrode.

[0054] The above-mentioned dry etching equipment may also include other structures such as the upper electrode, and only the structures related to the points of the present invention will be described in detail here. The gas ...

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Abstract

The invention provides a lower electrode and dry etching equipment, relating to the technical field of display. The lower electrode is applied to dry etching, and a problem that the lower electrode generates same suction force to all parts of a substrate to be etched in the prior art can be solved. The lower electrode comprises a conductive layer and a plurality of air holes which go through the lower electrode. The upper surface of the lower electrode is provided with a plurality of protrusions. The conductive layer comprises a first conductive unit and a second conductive unit at the periphery of the first conductive unit, and the first conductive unit and the second conductive unit do not contact with each other. All air holes are at the gas transmission area of the lower electrode, and the gas transmission area is defined by the outline of the first conductive unit. The invention is suitable for the production of the lower electrode and the dry etching equipment comprising the lower electrode.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a lower electrode and dry etching equipment. Background technique [0002] Dry etching plays an irreplaceable role in the manufacture of display devices. In a dry etching process, plasma is generally used to etch a substrate (mostly a glass substrate). Existing dry etching equipment includes: a reaction chamber, an upper electrode and a lower electrode located in the reaction chamber. In the specific implementation, the substrate to be etched is placed on the lower electrode, the plasma gas is introduced into the reaction chamber, and the reaction chamber is sealed, a voltage is applied to the upper electrode and the lower electrode, and a potential difference is formed between the two; under the action of the electric field , the plasma obtains high energy and bombards the substrate to be etched at a high speed to achieve etching. [0003] During the above etching process, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/3213
CPCH01L21/28H01L21/32135
Inventor 陈甫董康旭张颖刘建辉刘祖宏侯智李鹤王忠宝
Owner BOE TECH GRP CO LTD
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