Apparatus and method of using dummy data while storing data at a multi-bit storage element

A technology for storing components and virtual data, which is applied in information storage, static memory, read-only memory, etc., and can solve problems such as errors and increased data bit error rates

Active Publication Date: 2016-01-20
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While increasing the number of bits per storage element and reducing device feature size can increase the storage density of a memory device, the bit error r

Method used

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  • Apparatus and method of using dummy data while storing data at a multi-bit storage element
  • Apparatus and method of using dummy data while storing data at a multi-bit storage element
  • Apparatus and method of using dummy data while storing data at a multi-bit storage element

Examples

Experimental program
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Embodiment Construction

[0015] refer to figure 1 , the system 100 includes a data storage device 102 coupled to a host device 130 . The data storage device 102 includes a controller 120 and a non-volatile memory 104 configured to store multiple bits per storage element, such as multi-level cell (MLC) flash memory. The non-volatile memory 104 may support configurations of multiple bits per storage element, such as a configuration of 2 bits per storage element, a configuration of 3 bits per storage element, a configuration of 4 bits per storage element, or a configuration of 4 bits per storage element. Other configurations with more than 4 bits. Data storage device 102 is configured to select an "effective" number of bits to be stored at one or more multi-bit storage elements of non-volatile memory 104, such as the number of bits of user data stored per storage element. The data storage element 102 is also configured to selectively provide dummy data to the non-volatile memory 104 based on the effect...

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PUM

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Abstract

A storage device includes non-volatile memory and a controller. A method performed in the data storage device includes receiving, at the controller, first data and second data to be stored at the non-volatile memory. The method further includes sending, from the controller, the first data, the second data, and dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory. The single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states. The dummy data prevents a storage element of the single physical page from being programmed to a particular voltage state of the multiple voltage states.

Description

technical field [0001] The present disclosure generally relates to storing data at multi-bit storage elements. Background technique [0002] Non-volatile data storage devices such as Universal Serial Bus (USB) flash memory devices, embedded flash memory devices, or removable memory cards have enabled increased portability of data and software applications. Flash memory devices can enhance data storage density by storing multiple bits in each flash memory cell. For example, multi-level cell (MLC) flash memory devices provide increased storage density by storing 2 bits per storage element, 3 bits per storage element, 4 bits per storage element or more. While increasing the number of bits per storage element and reducing device feature size can increase the storage density of a memory device, the bit error rate of data stored at the memory device can also increase. For example, errors may result from cross-coupling effects between adjacent memory storage elements. [0003] A...

Claims

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Application Information

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IPC IPC(8): G11C11/56G11C16/10G11C16/04G11C7/10
CPCG11C7/1006G11C11/5628G11C16/0483G11C16/10G11C2211/5641
Inventor M.A.达布鲁D.潘特拉基斯
Owner SANDISK TECH LLC
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