Graphene structure, graphene device and manufacturing method thereof

A manufacturing method and graphene technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in large-scale integration, narrow nano-stripes, inability to provide, etc., and achieve easy integration of graphene device effect

Active Publication Date: 2018-02-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Making graphene into nanobelts is one of the methods to open the energy band of graphene, which puts forward higher requirements for the preparation process. At present, anisotropic etching using electron beam exposure technology, chemical methods, and sonochemical methods have been proposed. method, carbon nanotube cutting method, silicon carbide-based epitaxy, organic synthesis, direct growth of metal templates and other methods to prepare graphene nanoribbons, but many methods are difficult to use in large-scale integration, and some cannot provide sufficiently narrow nanoribbons. with and sufficiently smooth edges

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  • Graphene structure, graphene device and manufacturing method thereof
  • Graphene structure, graphene device and manufacturing method thereof
  • Graphene structure, graphene device and manufacturing method thereof

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Embodiment Construction

[0038] In order to make the above-mentioned purpose, features and advantages of the present invention more obvious and easy to understand, the specific implementation of the graphene structure and graphene device of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0040] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing...

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Abstract

The invention discloses a graphene structure, a graphene device, and manufacturing methods thereof. The graphene structure manufacturing method comprises the steps of providing a substrate which has a trench, forming spaced catalyst layers in the trench along the trench direction, and growing a graphene layer on the upper end face of the catalyst layers. A graphene strip is formed by forming the spaced catalyst layers in the trench and growing the graphene layer on the upper end face of the catalyst layers. The method is especially suitable for preparing a nano strip of smaller size, can be easily used in a large-scale integrated manner, and can easily integrate a graphene device.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a graphene nanobelt, a graphene device and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor technology, higher requirements are put forward for the integration and performance of integrated circuit devices, and new materials, new processes, and new devices are constantly being proposed and researched. [0003] Graphene, as a new material with a two-dimensional structure, has attracted widespread attention since it was isolated and prepared in 2004, and has quickly become a research hotspot. Since graphene has ultra-high carrier mobility at room temperature, if graphene is used as a channel material to make transistors, graphene devices will have better performance. However, graphene itself does not have an energy gap, so graphene transistors do not have a high switching ratio and cannot be used in app...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/1029H01L29/1606H01L29/66477H01L29/78
Inventor 贾昆鹏粟雅娟朱慧珑赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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