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Electronic power switching element IGBT high frequency model parasitic parameter acquiring method

A power electronic switch and parasitic parameter technology, which is applied in the field of obtaining parasitic parameters of a high-frequency model of a power electronic switching device IGBT, and can solve problems such as poor research and development of high-frequency characteristics and other problems.

Active Publication Date: 2015-07-08
XIAN UNIV OF TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for obtaining the parasitic parameters of the IGBT high-frequency model of the power electronic switching device, which overcomes the guiding role of the actual research and development caused by the electronic switching device model in the prior art that cannot accurately reflect the high-frequency characteristics of the actual switching device poor technical problem

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  • Electronic power switching element IGBT high frequency model parasitic parameter acquiring method
  • Electronic power switching element IGBT high frequency model parasitic parameter acquiring method
  • Electronic power switching element IGBT high frequency model parasitic parameter acquiring method

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Embodiment Construction

[0084] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0085] see figure 1 A system for acquiring parasitic parameters of a power electronic switching device IGBT high-frequency model includes an actual test circuit 1, the actual test circuit is connected with a first analog-to-digital converter 2, a second analog-to-digital converter 3, a first analog-to-digital converter and The second analog-to-digital converter 3 is connected to a computer data processing system 4 .

[0086] see figure 2 , the actual test circuit 1 includes a first DC voltage source 5, a first switch device 7 is connected to its anode, a first load 8 is connected to its cathode, and a first port 6 is arranged between the first DC voltage source 5 and the switch device 7 , a second port 9 is provided between the first DC voltage source 5 and the load 8; the first analog-to-digital converter 2 is connected to the first port,...

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Abstract

The invention discloses an electronic power switching element IGBT high frequency model parasitic parameter acquiring method. The method includes the steps that high frequency EMI characters of a switching element in an actual circuit are compared with high frequency EMI characters of a switching element in an artificial circuit, optimization and adjustment are conducted on switching element model parasitic parameters of the established artificial circuit by using particle swarm optimization, and the high frequency EMI characters of the switching element in the artificial circuit reach unanimity with the high frequency EMI characters of the switching element in the actual circuit. By means of the method, a high-precision and high-performance artificial model can be established, the research and development of the actual circuit can be guided effectively, the re-work probability is greatly lowered in the process of researching and developing the actual circuit, the production cycle is shortened, and the production cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of power electronic devices, and in particular relates to a method for acquiring parasitic parameters of an IGBT high-frequency model of a power electronic switching device. Background technique [0002] With the continuous development of power conversion technology, power converters based on power electronic switching devices are more and more widely used. Before developing the actual circuit of these power converters, it is often necessary to perform circuit characteristic simulation to accurately grasp the performance of the designed circuit. . In order to obtain accurate simulation results, it is very important to establish accurate simulation models for circuits and devices. The modeling of switching devices is the most critical part of circuit simulation, and the most difficult thing to determine in the high-frequency model of switching devices is its parasitic high-frequency parameters. [0003] The...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 姬军鹏马志鹏曾光李金刚
Owner XIAN UNIV OF TECH
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