LED chip of perpendicular structure and manufacturing method thereof

An LED chip, vertical structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem that the current expansion capability needs to be further improved, so as to improve the expansion uniformity, simplify the difficulty of chip packaging, and achieve the effect of driving

Inactive Publication Date: 2015-06-24
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, if figure 1 As shown, the P electrode 1 and N electrode 2 of the vertical structure LED chip are on the upper and lower sides of the chip, and its current spreading ability needs to be further improved.

Method used

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  • LED chip of perpendicular structure and manufacturing method thereof
  • LED chip of perpendicular structure and manufacturing method thereof
  • LED chip of perpendicular structure and manufacturing method thereof

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Embodiment Construction

[0031] The vertical structure LED chip of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0032] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the develop...

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Abstract

The invention discloses an LED chip of a perpendicular structure and a manufacturing method thereof. The manufacturing method comprises the steps that a first substrate is provided, and an N-type gallium nitride layer, a quantum well layer and a P-type gallium nitride layer are formed on the first substrate; the first substrate is etched to form a first groove, and the N-type gallium nitride layer is exposed; an Ohmic contact layer, a mirror and an insulating layer are formed on the P-type gallium nitride layer, the insulating layer covers the first groove, the portion, in the center of the first groove, of the insulating layer is etched, and the N-type gallium nitride layer is exposed; an N electrode is formed in the first groove, and a bonding layer is formed on the insulating layer and the N electrode; the bonding layer is in bonding with a bonding substrate, and the first substrate is removed; the N-type gallium nitride layer, the quantum well layer and the P-type gallium nitride layer are etched, and a second groove is formed; a P electrode is formed in the second groove. The obtained LED chip of the perpendicular structure is further provided. The chip packaging difficulty is simplified, the expanding evenness of current is improved, and driving under high current is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a vertical structure LED chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor light-emitting device with low energy consumption, small size, long life, good stability, fast response, stable light-emitting wavelength and other photoelectric performance characteristics. At present, it has a wide range of applications in lighting, home appliances, display screens, indicator lights and other fields. [0003] In recent years, due to the limitations of the structure and material of the traditional front-mount LED chip, the light output rate and operating current have been unable to meet the development needs. In addition, in order to improve the lighting quality and integration of LED products, the luminous efficiency per unit area (lm / W / cm2) has become an important indicator for measuring LED chips, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/60H01L33/36
CPCH01L33/06H01L33/0066H01L33/36H01L33/60H01L2933/0016
Inventor 张宇李起鸣
Owner ENRAYTEK OPTOELECTRONICS
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