Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A silicon piezoresistive temperature compensation evaluation method

A temperature compensation, silicon piezoresistive technology, applied in the direction of measuring fluid pressure, measuring devices, instruments, etc., can solve the waste of manpower, material resources, financial resources and time investment, it is difficult to quickly and accurately determine the compensation parameters, can not achieve automatic, Large-scale production and other problems, to achieve the effect of accelerating technology maturity, reducing technical risks, and saving time and cost

Active Publication Date: 2017-07-11
WUHAN AVIATION SENSING TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the sensor is used in different occasions, its requirements are also very different. In the actual temperature compensation, the change of a certain parameter will have an inestimable impact on the compensation result, so it is difficult to quickly and accurately determine the compensation parameters.
[0004] In general, the temperature compensation of the existing silicon piezoresistor needs to assemble the corresponding circuit for test verification and analysis, which will waste a lot of manpower, material resources, financial resources and time investment
At the same time, this method can only be limited to small-scale research and trial production, and cannot realize automatic and mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A silicon piezoresistive temperature compensation evaluation method
  • A silicon piezoresistive temperature compensation evaluation method
  • A silicon piezoresistive temperature compensation evaluation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be described in further detail below.

[0016] See figure 1 , The present invention takes the establishment of a temperature compensation circuit under the condition of constant current power supply as an example. In the figure, R11, R12, R21, and R22 are the four bridge arm resistances of the Wheatstone bridge of the compensated sensor, R P Adjust resistance, R for thermal zero drift S Adjust resistance for zero output, R τ Adjust the resistance for thermal sensitivity drift, so the compensation circuit can compensate the sensor's zero output, full output, thermal zero drift, and thermal sensitivity drift.

[0017] The resistance of the four arms of the Wheatstone bridge is a function of temperature and pressure, and temperature, pressure and resistance correspond one-to-one.

[0018] The following is estimated at a certain temperature T and pressure P figure 1 The results of the shown compensation circuit are taken as an example to illustrate the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to silicon piezoresistive temperature compensation technology, and relates to a temperature compensation evaluation method based on the silicon piezoresistive principle. In the present invention, the resistance values ​​of the four force-sensitive resistors constituting the Huishiden bridge of the silicon piezoresistive chip under multiple temperatures and pressures are input, and different compensation circuit structures, compensation devices and compensation device parameters are used as variables. By establishing a mathematical model , analyze and automatically calculate different compensation circuit structures, obtain compensation results related to variables, use theoretical compensation results at multiple temperature points and pressure points to roughly estimate whether the selection of intermediate compensation variables is appropriate and the selection range. The present invention establishes a mathematical model that can automatically and batch process data on the basis of theoretical analysis, and uses the mathematical model to quickly and accurately obtain an evaluation conclusion about a specific temperature compensation algorithm before the product is realized, which has great practical application value.

Description

Technical field [0001] The invention belongs to silicon piezoresistance temperature compensation technology, and relates to a temperature compensation evaluation method based on the principle of silicon piezoresistance. Background technique [0002] Since the material used in the silicon piezoresistive sensor is semiconductor silicon, it is greatly affected by temperature. When the ambient temperature changes drastically, the temperature is the biggest obstacle to the accuracy of pressure measurement. In order to improve the pressure measurement accuracy of the sensor, in addition to maintaining the consistency of the process when making the silicon piezoresistive chip, a temperature compensation is also required to eliminate the difference in chip performance. [0003] Because the sensor is used in different situations, its requirements are also very different. When the actual temperature compensation is performed, the change of a certain parameter will have an unpredictable impac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L25/00G01L27/00
Inventor 易少凡谢波肖腊连
Owner WUHAN AVIATION SENSING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com