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A hvpe reactor with improved substrate gas flow direction

A technology of gas flow direction and reactor, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of uneven substrate S reaction, reduce engineering appendages, simplify manufacturing process, and improve uniformity sexual effect

Active Publication Date: 2016-09-07
江苏正帆半导体设备有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention is to solve the problem of uneven reaction on the substrate S due to the convection and diffusion phenomena existing in the existing HVPE reactor

Method used

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  • A hvpe reactor with improved substrate gas flow direction
  • A hvpe reactor with improved substrate gas flow direction
  • A hvpe reactor with improved substrate gas flow direction

Examples

Experimental program
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Embodiment

[0022] Such as figure 2 As shown, a schematic structural view of a HVPE reactor for improving the direction of substrate airflow provided by the present invention includes a housing 11, a trunk 7 is installed on the top of the housing 11, and one side of the trunk 7 is inserted into the injection pipe-8, Jet pipe two 9, the other side inserts and installs air intake pipe two 4, air intake pipe three 5. Injection pipe one 8, injection pipe two 9 and intake pipe two 4, air intake pipe three 5 are respectively positioned at the both sides of trunk 7 center, and lined up, and injection pipe two 9 and intake pipe two 4 are closer to trunk 7 center. Injection pipe two 9, air intake pipe two 4 pass the end that trunk 7 is located in housing 11 and install a spray plate larger than its own pipe diameter. Housing 11 is provided with a substrate seat 2, on which two substrates S are placed, respectively located on both sides of the center of the substrate seat 2, one is located below ...

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PUM

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Abstract

The invention discloses an HVPE reactor for improving the airflow direction of the substrate, which is characterized in that it comprises a shell, the top of the shell is provided with a trunk, the shell is provided with a substrate seat, and one side of the trunk is provided with an injection pipe. 1. Injection Pipe 2, the other side is provided with intake pipe 2 and intake pipe 3; the base plate is provided with a base plate; Hole; the gap between the substrate seat and the inner wall of the housing forms the exhaust port. When the reactor provided by the present invention is produced, the internal first reaction gas and the second reaction gas are mixed with each other from the horizontal direction and the vertical direction respectively, so that a film with a uniform extension structure can be formed on most semiconductor substrates.

Description

technical field [0001] The present invention relates to a hydrogen vapor phase growth (HVPE) reactor that grows thin films by uniformly supplying gas to the surface of a substrate, in particular to a method that improves the supply and balance of gas injected into the entire reactor to achieve a higher level of HVPE reactor for thin film growth. Background technique [0002] HVPE is a kind of chemical vapor deposition equipment, which is a semiconductor engineering equipment using non-parallel growth method by the gas phase change and reaction of Ga and N precursors during the growth of GaN. The III-V gas is injected into the reactor, and through the pyrolysis and chemical reaction of the gas, the nitride is grown on the substrate to form a film. Because the growth efficiency of nitride is very high and the growth speed is very fast, compared with other growth methods, the maintenance cost and production cost are much lower. Because the reaction mechanism is relatively simp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/34
Inventor 许桢金施耐金东植
Owner 江苏正帆半导体设备有限公司
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