Polycrystalline silicon film morphology forming method

Abstract

The invention discloses a polycrystalline silicon film morphology forming method and belongs to the technical field of semiconductors. The polycrystalline silicon film morphology forming method comprises the steps of forming a grid electrode oxidation layer on a substrate and forming a polycrystalline silicon film layer on the grid electrode oxidation layer; performing doping treatment on the polycrystalline silicon film layer on the grid electrode oxidation layer; performing etching treatment on the polycrystalline silicon film layer subjected to the doping treatment according to the doping concentration distribution of the polycrystalline silicon film layer subjected to the doping treatment so as to form even polycrystalline silicon film morphology. In the polycrystalline silicon film morphology forming method, the transverse etching degree is influenced by adjusting the etching gas flow ratio or step-by-step etching according to the doping concentration distribution of the polycrystalline silicon film layer subjected to the doping treatment, accordingly the polycrystalline strip narrow edge situation is relieved or eliminated, even polycrystalline strips identical in longitudinal width are obtained, and follow-up process implementation is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for forming the morphology of a polysilicon film layer. Background technique [0002] The manufacturing process of the existing field effect transistor is roughly as follows: after forming the gate insulating layer on the substrate, then forming a polysilicon film layer as the gate film layer; then doping the polysilicon film layer to improve its conductivity, and then doping the polysilicon film layer The film layer is patterned to form a gate structure, and finally the substrate materials on both sides of the gate are doped to form a source region and a drain region respectively, thereby finally completing the manufacture of a field effect transistor. [0003] In the manufacturing process of the above-mentioned field effect transistor, since the polycrystalline gate structure will directly affect the main electrical properties of the MOS transistor, ...

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for forming the morphology of polysilicon film layer to solve the problem of uniformity of polysilicon gate morphology, such as the narrow side of the polysilicon strip formed by etching, the polysilicon strip in the vertical direction Inconsistent upper width and other issues

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