A method for controlling oxygen content in a silicon wafer carrying area of ​​a semiconductor device

Abstract

The invention discloses a method and a control device for controlling the oxygen content in the silicon wafer bearing area of ​​semiconductor equipment. The oxygen content control target is achieved by controlling the flow rate of nitrogen blown in stages. When the control starts, the silicon wafer bearing area is quickly controlled. Blow in nitrogen for gas replacement; when the oxygen content is lower than the set value, switch to the PID control mode, set the flow value with the calculated value of PID control, slowly blow nitrogen into the silicon wafer loading area, and control the oxygen content until target value. The invention controls the opening and closing combination of the rapid replacement air valve, the exhaust valve, the straight-through intake valve and the intake valve with MFC through the control module, so as to ensure that the pressure of the silicon wafer bearing area is stable within the target range, and the implementation is simple and resource saving , a good overall effect was obtained.

Description

technical field [0001] The present invention relates to a method for controlling gas content, more particularly, to a method for controlling oxygen content in a silicon wafer carrying area of ​​semiconductor diffusion equipment, and a control device for realizing the method. Background technique [0002] Semiconductor diffusion equipment is an important process equipment for integrated circuit manufacturing. As an automatic control equipment that requires continuous work for a long time and has excellent temperature control accuracy, good reliability and stability, it is used in the process of integrated circuit manufacturing. Various oxidation, annealing and film growth processes. [0003] A process result of diffusion equipment, that is, the uniformity of the diffusion layer on the surface of semiconductor silicon wafers, is the core index of diffusion equipment. After the silicon wafer has been processed, it is carried out in a relatively sealed silicon wafer carrying ar...

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Problems solved by technology

[0009] The purpose of the present invention is to overcome the shortcomings of the prior art, such as long time to achieve the oxygen content control target, repeated control process, and easy aging of the actuator, and provide a new method for controlling the oxygen content of the silicon wafer carrying area. Phased control, combining preset fast nitrogen blowing with PID control slow nitrogen blowing, and intervening in the flow rate calculated by PID, shortens the time to achieve the control target, avoids the adverse effects caused by pressure fluctuations, and reduces Reduce the frequent action of the actuator and prolong the service life

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